DTC123JEFRA Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTC123JEFRA

Código: E42

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT-416

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DTC123JEFRA datasheet

 ..1. Size:1527K  rohm
dtc123jefra dtc123jkafra dtc123jmfha dtc123juafra.pdf pdf_icon

DTC123JEFRA

DTC123J series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 2.2k DTC123JM DTC123JEB R2 (SC-105AA) (SC-89) 47k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC123JE DTC123

 5.1. Size:54K  motorola
pdtc123jef 1.pdf pdf_icon

DTC123JEFRA

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

 5.2. Size:54K  philips
pdtc123jef 1.pdf pdf_icon

DTC123JEFRA

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

 6.1. Size:55K  motorola
pdtc123je 3.pdf pdf_icon

DTC123JEFRA

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3

Otros transistores... DTC115EMFHA, DTC115EN3, DTC115EUAFRA, DTC115EY3, DTC115TC3, DTC115TE, DTC115TET1G, DTC115TM, TIP31, DTC123JET1G, DTC123JKAFRA, DTC123JM3, DTC123JM3T5G, DTC123JMFHA, DTC123JN3, DTC123JUAFRA, DTC123TE