DTC123JET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC123JET1G
Código: 8M
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT-416
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DTC123JET1G Datasheet (PDF)
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Otros transistores... DTC115EN3 , DTC115EUAFRA , DTC115EY3 , DTC115TC3 , DTC115TE , DTC115TET1G , DTC115TM , DTC123JEFRA , 2SC2625 , DTC123JKAFRA , DTC123JM3 , DTC123JM3T5G , DTC123JMFHA , DTC123JN3 , DTC123JUAFRA , DTC123TE , DTC123TET1G .
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History: 2N3784 | 2SA485Y | 2N3789 | 2SB906O | 2SB28 | 2N3790 | 2SA208



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