All Transistors. DTC123JET1G Datasheet

 

DTC123JET1G Datasheet and Replacement


   Type Designator: DTC123JET1G
   SMD Transistor Code: 8M
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-416
 

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DTC123JET1G Datasheet (PDF)

 ..1. Size:144K  onsemi
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DTC123JET1G

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 ..2. Size:399K  onsemi
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DTC123JET1G

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

 6.1. Size:54K  motorola
pdtc123jef 1.pdf pdf_icon

DTC123JET1G

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 6.2. Size:55K  motorola
pdtc123je 3.pdf pdf_icon

DTC123JET1G

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

Datasheet: DTC115EN3 , DTC115EUAFRA , DTC115EY3 , DTC115TC3 , DTC115TE , DTC115TET1G , DTC115TM , DTC123JEFRA , 2SC945 , DTC123JKAFRA , DTC123JM3 , DTC123JM3T5G , DTC123JMFHA , DTC123JN3 , DTC123JUAFRA , DTC123TE , DTC123TET1G .

History: 3DD53 | CSC2458 | DTS2001 | 2SC1654N | MQ5133 | ISC6046AU1 | P633567

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