DTC123JET1G Datasheet and Replacement
Type Designator: DTC123JET1G
SMD Transistor Code: 8M
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-416
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DTC123JET1G Datasheet (PDF)
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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NTE2547 | 2SB1121U | CMPT918 | 2SD1412A | UN6118 | RN1909 | 2N1015E
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History: NTE2547 | 2SB1121U | CMPT918 | 2SD1412A | UN6118 | RN1909 | 2N1015E



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