DTC124EET1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC124EET1G
Código: 8B
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 60
Encapsulados: SOT-416
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DTC124EET1G datasheet
..1. Size:144K onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf 
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
0.1. Size:155K onsemi
sdtc124eet1g.pdf
MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
4.1. Size:144K onsemi
sdtc124eet1.pdf
DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
6.1. Size:57K motorola
pdtc124ee 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification of circuit design
6.2. Size:57K philips
pdtc124ee 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification of circuit design
6.3. Size:140K rohm
dtc124e-series dtc124ee.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC124EM / DTC124EE / DTC124EUA / DTC124EKA Applications Dimensions (Unit mm) Inverter, Interface, Driver DTC124EM 1.2 0.32 Features (3) 1)Built-in bias resistors enable the configuration of an inverter (1)(2) circuit without connecting external input resistors (see the 0.22 0.13 equivalent circuit).
6.4. Size:152K rohm
dtc124eeb.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC124EEB Applications Dimensions (Unit mm) Inverter, Interface, Driver EMT3F 1.6 0.7 Features 0.26 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)
6.5. Size:1515K rohm
dtc124eefra dtc124euafra.pdf
DTC124E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 22k DTC124EM DTC124EEB R2 (SC-105AA) (SC-89) 22k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 22k 2) Built-in bias resistors enable the configuration of
6.6. Size:352K diodes
ddtc124ee.pdf
DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEW A 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M
6.7. Size:545K diodes
ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf
DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary PNP Types Available (DDTA) Case Material Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes
6.8. Size:198K mcc
dtc124ee sot-523.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 DTC124EE Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the
6.9. Size:407K htsemi
dtc124eca dtc124ee dtc124eka dtc124esa dtc124eua.pdf
/DTC124EKA/DTC124ESA DTC124EE/DTC124EUA/DTC124ECA DIGITAL TRANSISTOR (NPN) Features 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almo
6.10. Size:399K willas
dtc124ee.pdf
FM120-M WILLAS THRU DTC124EE NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Fe Featuresatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to SOT-
6.11. Size:1250K kexin
dtc124ee.pdf
SMD Type Transistors Digital Transistors DTC124EE (KDTC124EE ) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features Built-in bias resistors enable the configuration of an inverter circuit 2 1 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete 3 isola
6.12. Size:85K chenmko
chdtc124eegp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC124EEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
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