Биполярный транзистор DTC124EET1G
Даташит. Аналоги
Наименование производителя: DTC124EET1G
Маркировка: 8B
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора:
SOT-416
- подбор биполярного транзистора по параметрам
DTC124EET1G
Datasheet (PDF)
..1. Size:144K onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf 

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r
0.1. Size:155K onsemi
sdtc124eet1g.pdf 

MUN2212, MMUN2212L,MUN5212, DTC124EE,DTC124EM3, NSBC124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
4.1. Size:144K onsemi
sdtc124eet1.pdf 

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r
6.1. Size:57K motorola
pdtc124ee 2.pdf 

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design
6.2. Size:57K philips
pdtc124ee 2.pdf 

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design
6.3. Size:140K rohm
dtc124e-series dtc124ee.pdf 

100mA / 50V Digital transistors (with built-in resistors) DTC124EM / DTC124EE / DTC124EUA / DTC124EKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTC124EM1.20.32 Features (3)1)Built-in bias resistors enable the configuration of an inverter (1)(2)circuit without connecting external input resistors (see the 0.220.13equivalent circuit).
6.4. Size:152K rohm
dtc124eeb.pdf 

100mA / 50V Digital transistors (with built-in resistors) DTC124EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)
6.5. Size:1515K rohm
dtc124eefra dtc124euafra.pdf 

DTC124E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R122kDTC124EM DTC124EEBR2 (SC-105AA) (SC-89)22k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 22k 2) Built-in bias resistors enable the configuration of
6.6. Size:352K diodes
ddtc124ee.pdf 

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M
6.7. Size:545K diodes
ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf 

DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes
6.8. Size:198K mcc
dtc124ee sot-523.pdf 

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC124EEFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the
6.9. Size:407K htsemi
dtc124eca dtc124ee dtc124eka dtc124esa dtc124eua.pdf 

/DTC124EKA/DTC124ESADTC124EE/DTC124EUA/DTC124ECA DIGITAL TRANSISTOR (NPN) Features 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almo
6.10. Size:399K willas
dtc124ee.pdf 

FM120-M WILLASTHRUDTC124EENPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeFeaturesatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toSOT-
6.11. Size:1250K kexin
dtc124ee.pdf 

SMD Type TransistorsDigital TransistorsDTC124EE (KDTC124EE )SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Built-in bias resistors enable the configuration of an inverter circuit2 1 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete3 isola
6.12. Size:85K chenmko
chdtc124eegp.pdf 

CHENMKO ENTERPRISE CO.,LTDCHDTC124EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
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