DTC124EET1G. Аналоги и основные параметры

Наименование производителя: DTC124EET1G

Маркировка: 8B

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 22 kOhm

Встроенный резистор цепи смещения R2 = 22 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 60

Корпус транзистора: SOT-416

 Аналоги (замена) для DTC124EET1G

- подборⓘ биполярного транзистора по параметрам

 

DTC124EET1G даташит

 ..1. Size:144K  onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdfpdf_icon

DTC124EET1G

DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r

 0.1. Size:155K  onsemi
sdtc124eet1g.pdfpdf_icon

DTC124EET1G

MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 4.1. Size:144K  onsemi
sdtc124eet1.pdfpdf_icon

DTC124EET1G

DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r

 6.1. Size:57K  motorola
pdtc124ee 2.pdfpdf_icon

DTC124EET1G

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification of circuit design

Другие транзисторы: DTC123TN3, DTC123YEFRA, DTC123YKAFRA, DTC123YN3, DTC123YS3, DTC123YUAFRA, DTC124EC3, DTC124EEFRA, NJW0281G, DTC124EKAFRA, DTC124EM3, DTC124EM3T5G, DTC124EMFHA, DTC124EN3, DTC124ES3, DTC124EUAFRA, DTC124TCA