EMB10 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EMB10

Código: B10

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: SC-107C

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EMB10 datasheet

..1. Size:118K rohm
emb10 umb10n imb10a umb10n.pdf pdf_icon

EMB10 / UMB10N / IMB10A Transistors General purpose (dual digital transistors) EMB10 / UMB10N / IMB10A Dimensions (Unit mm) Features 1) Two DTA123J chips in a EMT or UMT or SMT EMB10 package. (6) (5) (4) 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3) interference. Each l

..2. Size:543K rohm
emb10.pdf pdf_icon

EMB10 / UMB10N / IMB10A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) (2) IC(MAX.) -100mA (3) (3) R1 2.2kW EMB10 UMB10N R2 (SC-107C) 47kW SOT-353 (SC-88) SMT6 (4) (5) lFeatures (6) (3) 1) Built-In Biasing

0.1. Size:801K nxp
pemb10 pumb10.pdf pdf_icon

PEMB10; PUMB10 PNP/PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 47 k Rev. 3 3 January 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NPN/PNP NPN/NPN Package complement complement configuration NXP JEITA PEM

0.2. Size:1355K rohm
emb10fha umb10nfha imb10afra.pdf pdf_icon

EMB10 / UMB10N / IMB10A EMB10FHA / UMB10NFHA / IMB10AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) (2) IC(MAX.) -100mA (3) (3) R1 2.2kW EMB10 UMB10N EMB10FHA UMB10NFHA R2 47kW (SC-107C) SOT-353 (

Otros transistores... DTD123TK, DTD143EN3, DTD143TK, DTD143TN3, DTDG14GP, EMA3, EMA4, EMA5, 2SD669A, EMB10FHA, EMB11, EMB11FHA, EMB2, EMC3DXV5T1G, EMC3DXV5T5G, EMC4DXV5, EMC4DXV5T1G

EMB10 Datasheet. Equivalente