EMB11 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N / IMB11A Features External dimensions (Unit : mm) 1) Two DTA114E chips in a EMT or UMT or SMT EMB11package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)automatic mounting machines. (6) (1)1.21.63) Transistor elements are independent, eliminating inte

EMB11 / UMB11N / IMB11ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R110kWEMB11 UMB11N R2(SC-107C) 10kW SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resisto

EMB11 dual digital transistors (PNP+ PNP)SOT-563 FEATURES Two DTA114E chips in a package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent,eliminating interference Mouting cost and area be cut in half 1 Marking: B11 Equivalent circuit Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCC Supply Voltage

DISCRETE SEMICONDUCTORS DATA SHEETPEMB11; PUMB11PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 03Supersedes data of 2001 Sep 13NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB11; PUMB11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U

EMB11FHA / UMB11NFHA / IMB11AFRAEMB11 / UMB11N / IMB11ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R110kWEMB11 UMB11N EMB11FHA UMB11NFHAR210kW (SC-107C) SOT-353 (S

EMB11FHA / UMB11NFHA / IMB11AFRAEMB11 / UMB11N / IMB11ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R110kWEMB11 UMB11N EMB11FHA UMB11NFHAR210kW (SC-107C) SOT-353 (S

CHENMKO ENTERPRISE CO.,LTDCHEMB11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil