EMB11 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EMB11

Código: B11

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: SC-107C

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EMB11 datasheet

 ..1. Size:69K  rohm
 emb11 umb11n imb11a umb11n.pdf pdf_icon

EMB11

EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N / IMB11A Features External dimensions (Unit mm) 1) Two DTA114E chips in a EMT or UMT or SMT EMB11 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating inte

 ..2. Size:543K  rohm
 emb11.pdf pdf_icon

EMB11

EMB11 / UMB11N / IMB11A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 10kW EMB11 UMB11N R2 (SC-107C) 10kW SOT-353 (SC-88) SMT6 (4) (5) lFeatures (6) 1) Built-In Biasing Resisto

 ..3. Size:1589K  htsemi
 emb11.pdf pdf_icon

EMB11

EMB11 dual digital transistors (PNP+ PNP) SOT-563 FEATURES Two DTA114E chips in a package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent,eliminating interference Mouting cost and area be cut in half 1 Marking B11 Equivalent circuit Absolute maximum ratings (Ta=25 ) Symbol Parameter Value Units VCC Supply Voltage

 0.1. Size:137K  philips
 pemb11 pumb11.pdf pdf_icon

EMB11

DISCRETE SEMICONDUCTORS DATA SHEET PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k , R2 = 10 k Product data sheet 2003 Oct 03 Supersedes data of 2001 Sep 13 NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; PEMB11; PUMB11 R1 = 10 k , R2 = 10 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. U

MOSTRAR MÁS

Otros transistores... DTD143TK, DTD143TN3, DTDG14GP, EMA3, EMA4, EMA5, EMB10, EMB10FHA, BC549, EMB11FHA, EMB2, EMC3DXV5T1G, EMC3DXV5T5G, EMC4DXV5, EMC4DXV5T1G, EMC5DXV5, EMC5DXV5T1G