EMB11 Datasheet. Specs and Replacement

Type Designator: EMB11

SMD Transistor Code: B11

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: SC-107C

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EMB11 datasheet

 ..1. Size:69K  rohm

 emb11 umb11n imb11a umb11n.pdf pdf_icon

EMB11

EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N / IMB11A Features External dimensions (Unit mm) 1) Two DTA114E chips in a EMT or UMT or SMT EMB11 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating inte... See More ⇒

 ..2. Size:543K  rohm

 emb11.pdf pdf_icon

EMB11

EMB11 / UMB11N / IMB11A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 10kW EMB11 UMB11N R2 (SC-107C) 10kW SOT-353 (SC-88) SMT6 (4) (5) lFeatures (6) 1) Built-In Biasing Resisto... See More ⇒

 ..3. Size:1589K  htsemi

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EMB11

EMB11 dual digital transistors (PNP+ PNP) SOT-563 FEATURES Two DTA114E chips in a package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent,eliminating interference Mouting cost and area be cut in half 1 Marking B11 Equivalent circuit Absolute maximum ratings (Ta=25 ) Symbol Parameter Value Units VCC Supply Voltage... See More ⇒

 0.1. Size:137K  philips

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EMB11

DISCRETE SEMICONDUCTORS DATA SHEET PEMB11; PUMB11 PNP/PNP resistor-equipped transistors; R1 = 10 k , R2 = 10 k Product data sheet 2003 Oct 03 Supersedes data of 2001 Sep 13 NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; PEMB11; PUMB11 R1 = 10 k , R2 = 10 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. U... See More ⇒

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Detailed specifications: DTD143TK, DTD143TN3, DTDG14GP, EMA3, EMA4, EMA5, EMB10, EMB10FHA, BC549, EMB11FHA, EMB2, EMC3DXV5T1G, EMC3DXV5T5G, EMC4DXV5, EMC4DXV5T1G, EMC5DXV5, EMC5DXV5T1G

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