EMB2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMB2
Código: B2
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 68
Encapsulados: SC-107C
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EMB2 datasheet
..1. Size:68K rohm
emb2 umb2n imb2a umb2n.pdf 
EMB2 / UMB2N / IMB2A Transistors General purpose (dual digital transistors) EMB2 / UMB2N / IMB2A External dimensions (Unit mm) Features 1) Two DTA144E chips in a EMT or UMT or SMT EMB2 package. (4) ( ) 3 (5) (2) 2) Same size as EMT3 or UMT3 or SMT3 package, so (6) ( ) 1 1.2 same mounting machine can be used for both. 1.6 3) Transistor elements are independent,
..2. Size:529K rohm
emb2.pdf
EMB2 / UMB2N / IMB2A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 47kW EMB2 UMB2N R2 (SC-107C) 47kW SOT-353 (SC-88) SMT6 (4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R
0.1. Size:204K 1
emb20n03v.pdf
EMB20N03V N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 12A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20
0.2. Size:137K philips
pemb2 pumb2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PEMB2; PUMB2 PNP/PNP resistor-equipped transistors; R1 = 47 k , R2 = 47 k Product data sheet 2003 Oct 15 Supersedes data of 2001 Sep 14 NXP Semiconductors Product data sheet PNP/PNP resistor-equipped transistors; PEMB2; PUMB2 R1 = 47 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT
0.3. Size:65K nxp
pemb24 pumb24.pdf
PEMB24; PUMB24 PNP/PNP resistor-equipped transistors; R1 = 100 k , R2 = 100 k Rev. 02 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipped transistors Table 1. Product overview Type number Package NPN/PNP NPN/NPN complement complement NXP JEITA PEMB24 SOT666 - PEMD24 PEMH24 PUMB24 SOT363 SC-88 PUMD24 PUMH24 1.2 Features
0.4. Size:57K nxp
pemb20 pumb20.pdf
PEMB20; PUMB20 PNP/PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Rev. 03 1 September 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipped transistors Table 1. Product overview Type number Package NPN/PNP NPN/NPN complement complement NXP JEITA PEMB20 SOT666 - PEMD20 PEMH20 PUMB20 SOT363 SC-88 PUMD20 PUMH20 1.2 Features
0.5. Size:1340K rohm
emb2fha.pdf
EMB2 / UMB2N / IMB2A EMB2FHA / UMB2NFHA / IMB2AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 47kW EMB2 UMB2N EMB2FHA UMB2NFHA R2 47kW (SC-107C) SOT-353 (SC-88) SM
0.6. Size:1340K rohm
emb2fha umb2nfha imb2afra.pdf
EMB2 / UMB2N / IMB2A EMB2FHA / UMB2NFHA / IMB2AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 47kW EMB2 UMB2N EMB2FHA UMB2NFHA R2 47kW (SC-107C) SOT-353 (SC-88) SM
0.7. Size:191K china
emb20p03v.pdf
EMB20P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 18A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS
0.8. Size:95K chenmko
chemb2gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHEMB2GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabili
0.9. Size:181K emc
emb20p03g.pdf
EMB20P03G P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 10A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS
0.10. Size:191K emc
emb20p03v.pdf
EMB20P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 18A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS
0.11. Size:188K emc
emb22a04g.pdf
EMB22A04G Dual N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary BVDSS 40V RDSON (MAX.) 22m ID 8A Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20 V TA = 25 C 8 Co
0.12. Size:204K emc
emb20n03v.pdf
EMB20N03V N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 12A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20
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