EMB2 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMB2
SMD Transistor Code: B2
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.03
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: SC-107C
EMB2 Transistor Equivalent Substitute - Cross-Reference Search
EMB2 Datasheet (PDF)
emb2 umb2n imb2a umb2n.pdf
EMB2 / UMB2N / IMB2A Transistors General purpose (dual digital transistors) EMB2 / UMB2N / IMB2A External dimensions (Unit : mm) Features 1) Two DTA144E chips in a EMT or UMT or SMT EMB2package. (4) ( )3(5) (2)2) Same size as EMT3 or UMT3 or SMT3 package, so (6) ( )11.2same mounting machine can be used for both. 1.63) Transistor elements are independent,
emb2.pdf
EMB2 / UMB2N / IMB2ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R147kWEMB2 UMB2N R2(SC-107C) 47kW SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R
emb20n03v.pdf
EMB20N03VNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID12AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20
pemb2 pumb2.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMB2; PUMB2PNP/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2003 Oct 15Supersedes data of 2001 Sep 14NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB2; PUMB2R1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pemb24 pumb24.pdf
PEMB24; PUMB24PNP/PNP resistor-equipped transistors;R1 = 100 k, R2 = 100 kRev. 02 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP resistor-equipped transistorsTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB24 SOT666 - PEMD24 PEMH24PUMB24 SOT363 SC-88 PUMD24 PUMH241.2 Features
pemb20 pumb20.pdf
PEMB20; PUMB20PNP/PNP resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 03 1 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP resistor-equipped transistorsTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB20 SOT666 - PEMD20 PEMH20PUMB20 SOT363 SC-88 PUMD20 PUMH201.2 Features
emb2fha.pdf
EMB2 / UMB2N / IMB2AEMB2FHA / UMB2NFHA / IMB2AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R147kWEMB2 UMB2N EMB2FHA UMB2NFHAR247kW (SC-107C) SOT-353 (SC-88) SM
emb2fha umb2nfha imb2afra.pdf
EMB2 / UMB2N / IMB2AEMB2FHA / UMB2NFHA / IMB2AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R147kWEMB2 UMB2N EMB2FHA UMB2NFHAR247kW (SC-107C) SOT-353 (SC-88) SM
emb20p03v.pdf
EMB20P03VPChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID18AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS
chemb2gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMB2GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili
emb20p03g.pdf
EMB20P03GPChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID10AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS
emb20p03v.pdf
EMB20P03VPChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID18AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS
emb22a04g.pdf
EMB22A04GDualNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:BVDSS40VRDSON(MAX.)22mID8APbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20VTA=25C8Co
emb20n03v.pdf
EMB20N03VNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)20mID12AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SB265 | 2SB38 | FH102A
