EMC4DXV5T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EMC4DXV5T1G

Código: UE

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.357 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT-553

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EMC4DXV5T1G datasheet

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EMC4DXV5T1G

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common http //onsemi.com Base-Collector Bias 31 2 Resistor Transistors R1 R2 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Q2 R2 Resistor Network Q1 R1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base 45 resis

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EMC4DXV5T1G

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common http //onsemi.com Base-Collector Bias 31 2 Resistor Transistors R1 R2 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Q2 R2 Resistor Network Q1 R1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base 45 resis

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EMC4DXV5T1G

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common http //onsemi.com Base-Collector Bias 31 2 Resistor Transistors R1 R2 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Q2 R2 Resistor Network Q1 R1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base 45 resis

Otros transistores... EMB10, EMB10FHA, EMB11, EMB11FHA, EMB2, EMC3DXV5T1G, EMC3DXV5T5G, EMC4DXV5, 2SC2383, EMC5DXV5, EMC5DXV5T1G, EMD12, EMD12FHA, EMD2, EMD22, EMD22FHA, EMD29