EMD2
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMD2
Código: D2
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.03
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: SC-107C
Búsqueda de reemplazo de transistor bipolar EMD2
EMD2
Datasheet (PDF)
..1. Size:563K rohm
emd2 umd2n.pdf 

EMD2 / UMD2N / IMD2A Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Value (6) (6) (5) (5) (4) (4) VCC 50V (1) (1) (2) IC(MAX.) 100mA (2) (3) (3) R1 22kW EMD2 UMD2N (SC-107C) R2 SOT-353 (SC-88) 22kW SMT6 (4) (5) (6) (3) Parameter Valu
..2. Size:98K rohm
emd2 umd2n imd2a.pdf 

EMD2 / UMD2N / IMD2A Transistors General purpose (dual digital transistors) EMD2 / UMD2N / IMD2A Features Dimensions (Unit mm) 1) Both the DTA124E chip and DTC124E chip in a EMT EMD2 or UMT or SMT package. 2) Mounting possible with EMT6 or UMT6 or SMT6 (6) (5) (4) automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3) interferen
..3. Size:536K htsemi
emd2.pdf 

EMD2 General purpose transistors (dual transistors) FEATURES SOT-563 Both the DTA124E chip and DTC124E chip in a package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent, eliminating interference Mounting cost and area be cut in half 1 Marking D2 Equivalent circuit Absolute maximum ratings(Ta=25 ) Parameter Symbol
0.1. Size:69K philips
pemd24 pumd24.pdf 

PEMD24; PUMD24 NPN/PNP resistor-equipped transistors; R1 = 100 k , R2 = 100 k Rev. 01 2 May 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors (RET). Table 1 Product overview Type number Package PNP/PNP NPN/NPN complement complement Philips JEITA PEMD24 SOT666 - PEMB24 PEMH24 PUMD24 SOT363 SC-88 PUMB24 PUMH24 1.2 Featu
0.2. Size:98K philips
pemd2 pimd2 pumd2.pdf 

PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 k , R2 = 22 k Rev. 07 24 September 2008 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package PNP/PNP NPN/NPN complement complement NXP JEITA PEMD2 SOT666 - PEMB1 PEMH1 PIMD2 SOT457 SC-74 - - PUMD2 SOT363 SC-8
0.3. Size:56K philips
pemd20 pumd20.pdf 

PEMD20; PUMD20 NPN/PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Rev. 01 2 May 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors (RET). Table 1 Product overview Type number Package PNP/PNP NPN/NPN complement complement Philips JEITA PEMD20 SOT666 - PEMB20 PEMH20 PUMD20 SOT363 SC-88 PUMB20 PUMH20 1.2 Featu
0.4. Size:1401K rohm
emd2fha umd2nfha.pdf 

EMD2FHA / UMD2NFHA / IMD2AFRA EMD2 / UMD2N / IMD2A Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Value (6) (6) (5) (5) (4) (4) VCC 50V (1) (1) (2) IC(MAX.) 100mA (2) (3) (3) R1 22kW EMD2 UMD2N EMD2FHA UMD2NFHA (SC-107C) R2 SOT-353 (SC-88) 22kW SMT6 (4)
0.5. Size:1334K rohm
emd22fha umd22nfha.pdf 

EMD22FHA / UMD22NFHA EMD22 / UMD22N Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified Outline EMT6 UMT6 Parameter Value (6) (6) (5) (5) (4) (4) VCC 50V (1) (1) (2) IC(MAX.) 100mA (2) (3) (3) R1 4.7k EMD22FHA UMD22NFHA EMD22 UMD22N (SC-107C) R2 SOT-363 (SC-88) 47k Param
0.6. Size:1439K rohm
emd2fha umd2nfha imd2afra.pdf 

EMD2FHA / UMD2NFHA / IMD2AFRA EMD2 / UMD2N / IMD2A Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Value (6) (6) (5) (5) (4) (4) VCC 50V (1) (1) (2) IC(MAX.) 100mA (2) (3) (3) R1 22kW EMD2 UMD2N EMD2FHA UMD2NFHA (SC-107C) R2 SOT-353 (SC-88) 22kW SMT6 (4)
0.7. Size:286K rohm
emd29.pdf 

EMD29 Datasheet PNP + NPN Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline EMT6 Parameter Value (6) (5) (4) VCC 12V (1) (2) IC(MAX.) 500mA (3) R1 1k EMD29 (SC-107C) R2 10k Parameter Value VCC 50V IC(MAX.) 100mA R1 10k R2 10k Features Inner circuit 1) Both the DTB513Z chip and DTC1
0.8. Size:445K rohm
emd22 umd22n.pdf 

EMD22 / UMD22N Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline EMT6 UMT6 Parameter Value (6) (6) (5) (5) (4) (4) VCC 50V (1) (1) (2) IC(MAX.) 100mA (2) (3) (3) R1 4.7k EMD22 UMD22N (SC-107C) R2 SOT-363 (SC-88) 47k Parameter Value VCC 50V IC(MAX.) 100mA R1 4.7k R2
0.9. Size:163K rohm
emd22 umd22n.pdf 

General purpose (dual digital transistors) EMD22 / UMD22N Features Dimensions (Unit mm) 1) Both the DTA143Z chip and DTC143Z chip in an EMT or UMT package. EMD22 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (4) (3) (5) (2) interference. (6) (1) 1.2 1.6 4) Mounting cost and area can be cut in half.
0.10. Size:123K chenmko
chemd2gp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHEMD2GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabilit
0.11. Size:184K chenmko
chemd22gp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHEMD22GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
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