EMD2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EMD2 / UMD2N / IMD2ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) (4) (4) VCC50V(1) (1) (2) IC(MAX.)100mA (2) (3) (3) R122kWEMD2 UMD2N (SC-107C) R2 SOT-353 (SC-88) 22kWSMT6(4) (5) (6) (3) Parameter Valu

EMD2 / UMD2N / IMD2A Transistors General purpose (dual digital transistors) EMD2 / UMD2N / IMD2A Features Dimensions (Unit : mm) 1) Both the DTA124E chip and DTC124E chip in a EMT EMD2or UMT or SMT package. 2) Mounting possible with EMT6 or UMT6 or SMT6 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interferen

EMD2 General purpose transistors (dual transistors)FEATURES SOT-563 Both the DTA124E chip and DTC124E chip in a package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent, eliminating interference Mounting cost and area be cut in half 1 Marking: D2 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol

PEMD24; PUMD24NPN/PNP resistor-equipped transistors;R1 = 100 k, R2 = 100 kRev. 01 2 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET).Table 1: Product overviewType number Package PNP/PNP NPN/NPNcomplement complementPhilips JEITAPEMD24 SOT666 - PEMB24 PEMH24PUMD24 SOT363 SC-88 PUMB24 PUMH241.2 Featu

PEMD2; PIMD2; PUMD2NPN/PNP resistor-equipped transistors;R1 = 22 k, R2 = 22 kRev. 07 24 September 2008 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package PNP/PNP NPN/NPNcomplement complementNXP JEITAPEMD2 SOT666 - PEMB1 PEMH1PIMD2 SOT457 SC-74 - -PUMD2 SOT363 SC-8

PEMD20; PUMD20NPN/PNP resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 01 2 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET).Table 1: Product overviewType number Package PNP/PNP NPN/NPNcomplement complementPhilips JEITAPEMD20 SOT666 - PEMB20 PEMH20PUMD20 SOT363 SC-88 PUMB20 PUMH201.2 Featu

EMD2FHA / UMD2NFHA / IMD2AFRAEMD2 / UMD2N / IMD2ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R122kWEMD2UMD2NEMD2FHA UMD2NFHA(SC-107C)R2 SOT-353 (SC-88)22kWSMT6(4)

EMD22FHA / UMD22NFHAEMD22 / UMD22NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified OutlineEMT6 UMT6Parameter Value(6)(6)(5)(5)(4)(4)VCC50V(1)(1)(2)IC(MAX.)100mA(2)(3)(3)R14.7kEMD22FHA UMD22NFHAEMD22UMD22N(SC-107C)R2 SOT-363 (SC-88)47kParam

EMD2FHA / UMD2NFHA / IMD2AFRAEMD2 / UMD2N / IMD2ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R122kWEMD2UMD2NEMD2FHA UMD2NFHA(SC-107C)R2 SOT-353 (SC-88)22kWSMT6(4)

EMD29DatasheetPNP + NPN Complex Digital Transistors (Bias Resistor Built-in Transistors) OutlineEMT6Parameter Value(6)(5)(4)VCC12V(1)(2)IC(MAX.)500mA(3)R11kEMD29(SC-107C)R210kParameter ValueVCC50VIC(MAX.)100mAR110kR210kFeatures Inner circuit1) Both the DTB513Z chip and DTC1

EMD22 / UMD22NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) OutlineEMT6 UMT6Parameter Value(6)(6)(5)(5)(4)(4)VCC50V(1)(1)(2)IC(MAX.)100mA(2)(3)(3)R14.7kEMD22UMD22N(SC-107C)R2 SOT-363 (SC-88)47kParameter ValueVCC50VIC(MAX.)100mAR14.7kR2

General purpose (dual digital transistors) EMD22 / UMD22N Features Dimensions (Unit : mm) 1) Both the DTA143Z chip and DTC143Z chip in an EMT or UMT package. EMD222) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (4) (3)(5) (2)interference. (6) (1)1.21.64) Mounting cost and area can be cut in half.

CHENMKO ENTERPRISE CO.,LTDCHEMD2GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit

CHENMKO ENTERPRISE CO.,LTDCHEMD22GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil