Справочник транзисторов. EMD2

 

Биполярный транзистор EMD2 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: EMD2
   Маркировка: D2
   Тип материала: Si
   Полярность: Pre-Biased-NPN*PNP
   Встроенный резистор цепи смещения R1 = 22 kOhm
   Встроенный резистор цепи смещения R2 = 22 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.03 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 56
   Корпус транзистора: SC-107C

 Аналоги (замена) для EMD2

 

 

EMD2 Datasheet (PDF)

 ..1. Size:563K  rohm
emd2 umd2n.pdf

EMD2
EMD2

EMD2 / UMD2N / IMD2ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) (4) (4) VCC50V(1) (1) (2) IC(MAX.)100mA (2) (3) (3) R122kWEMD2 UMD2N (SC-107C) R2 SOT-353 (SC-88) 22kWSMT6(4) (5) (6) (3) Parameter Valu

 ..2. Size:98K  rohm
emd2 umd2n imd2a.pdf

EMD2
EMD2

EMD2 / UMD2N / IMD2A Transistors General purpose (dual digital transistors) EMD2 / UMD2N / IMD2A Features Dimensions (Unit : mm) 1) Both the DTA124E chip and DTC124E chip in a EMT EMD2or UMT or SMT package. 2) Mounting possible with EMT6 or UMT6 or SMT6 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interferen

 ..3. Size:536K  htsemi
emd2.pdf

EMD2

EMD2 General purpose transistors (dual transistors)FEATURES SOT-563 Both the DTA124E chip and DTC124E chip in a package Mounting possible with SOT-563 automatic mounting machines Transistor elements are independent, eliminating interference Mounting cost and area be cut in half 1 Marking: D2 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol

 0.1. Size:69K  philips
pemd24 pumd24.pdf

EMD2
EMD2

PEMD24; PUMD24NPN/PNP resistor-equipped transistors;R1 = 100 k, R2 = 100 kRev. 01 2 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET).Table 1: Product overviewType number Package PNP/PNP NPN/NPNcomplement complementPhilips JEITAPEMD24 SOT666 - PEMB24 PEMH24PUMD24 SOT363 SC-88 PUMB24 PUMH241.2 Featu

 0.2. Size:98K  philips
pemd2 pimd2 pumd2.pdf

EMD2
EMD2

PEMD2; PIMD2; PUMD2NPN/PNP resistor-equipped transistors;R1 = 22 k, R2 = 22 kRev. 07 24 September 2008 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package PNP/PNP NPN/NPNcomplement complementNXP JEITAPEMD2 SOT666 - PEMB1 PEMH1PIMD2 SOT457 SC-74 - -PUMD2 SOT363 SC-8

 0.3. Size:56K  philips
pemd20 pumd20.pdf

EMD2
EMD2

PEMD20; PUMD20NPN/PNP resistor-equipped transistors;R1 = 2.2 k, R2 = 2.2 kRev. 01 2 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET).Table 1: Product overviewType number Package PNP/PNP NPN/NPNcomplement complementPhilips JEITAPEMD20 SOT666 - PEMB20 PEMH20PUMD20 SOT363 SC-88 PUMB20 PUMH201.2 Featu

 0.4. Size:1401K  rohm
emd2fha umd2nfha.pdf

EMD2
EMD2

EMD2FHA / UMD2NFHA / IMD2AFRAEMD2 / UMD2N / IMD2ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R122kWEMD2UMD2NEMD2FHA UMD2NFHA(SC-107C)R2 SOT-353 (SC-88)22kWSMT6(4)

 0.5. Size:1334K  rohm
emd22fha umd22nfha.pdf

EMD2
EMD2

EMD22FHA / UMD22NFHAEMD22 / UMD22NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified OutlineEMT6 UMT6Parameter Value(6)(6)(5)(5)(4)(4)VCC50V(1)(1)(2)IC(MAX.)100mA(2)(3)(3)R14.7kEMD22FHA UMD22NFHAEMD22UMD22N(SC-107C)R2 SOT-363 (SC-88)47kParam

 0.6. Size:1439K  rohm
emd2fha umd2nfha imd2afra.pdf

EMD2
EMD2

EMD2FHA / UMD2NFHA / IMD2AFRAEMD2 / UMD2N / IMD2ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R122kWEMD2UMD2NEMD2FHA UMD2NFHA(SC-107C)R2 SOT-353 (SC-88)22kWSMT6(4)

 0.7. Size:286K  rohm
emd29.pdf

EMD2
EMD2

EMD29DatasheetPNP + NPN Complex Digital Transistors (Bias Resistor Built-in Transistors) OutlineEMT6Parameter Value(6)(5)(4)VCC12V(1)(2)IC(MAX.)500mA(3)R11kEMD29(SC-107C)R210kParameter ValueVCC50VIC(MAX.)100mAR110kR210kFeatures Inner circuit1) Both the DTB513Z chip and DTC1

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emd22 umd22n.pdf

EMD2
EMD2

EMD22 / UMD22NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) OutlineEMT6 UMT6Parameter Value(6)(6)(5)(5)(4)(4)VCC50V(1)(1)(2)IC(MAX.)100mA(2)(3)(3)R14.7kEMD22UMD22N(SC-107C)R2 SOT-363 (SC-88)47kParameter ValueVCC50VIC(MAX.)100mAR14.7kR2

 0.9. Size:163K  rohm
emd22 umd22n.pdf

EMD2
EMD2

General purpose (dual digital transistors) EMD22 / UMD22N Features Dimensions (Unit : mm) 1) Both the DTA143Z chip and DTC143Z chip in an EMT or UMT package. EMD222) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (4) (3)(5) (2)interference. (6) (1)1.21.64) Mounting cost and area can be cut in half.

 0.10. Size:123K  chenmko
chemd2gp.pdf

EMD2
EMD2

CHENMKO ENTERPRISE CO.,LTDCHEMD2GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit

 0.11. Size:184K  chenmko
chemd22gp.pdf

EMD2
EMD2

CHENMKO ENTERPRISE CO.,LTDCHEMD22GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

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