EMD22 Todos los transistores

 

EMD22 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EMD22
   Código: D22
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SC-107C
     - Selección de transistores por parámetros

 

EMD22 Datasheet (PDF)

 ..1. Size:445K  rohm
 emd22 umd22n.pdf pdf_icon

EMD22

EMD22 / UMD22NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) OutlineEMT6 UMT6Parameter Value(6)(6)(5)(5)(4)(4)VCC50V(1)(1)(2)IC(MAX.)100mA(2)(3)(3)R14.7kEMD22UMD22N(SC-107C)R2 SOT-363 (SC-88)47kParameter ValueVCC50VIC(MAX.)100mAR14.7kR2

 ..2. Size:163K  rohm
 emd22 umd22n.pdf pdf_icon

EMD22

General purpose (dual digital transistors) EMD22 / UMD22N Features Dimensions (Unit : mm) 1) Both the DTA143Z chip and DTC143Z chip in an EMT or UMT package. EMD222) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (4) (3)(5) (2)interference. (6) (1)1.21.64) Mounting cost and area can be cut in half.

 0.1. Size:1334K  rohm
 emd22fha umd22nfha.pdf pdf_icon

EMD22

EMD22FHA / UMD22NFHAEMD22 / UMD22NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified OutlineEMT6 UMT6Parameter Value(6)(6)(5)(5)(4)(4)VCC50V(1)(1)(2)IC(MAX.)100mA(2)(3)(3)R14.7kEMD22FHA UMD22NFHAEMD22UMD22N(SC-107C)R2 SOT-363 (SC-88)47kParam

 0.2. Size:184K  chenmko
 chemd22gp.pdf pdf_icon

EMD22

CHENMKO ENTERPRISE CO.,LTDCHEMD22GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

MOSTRAR MÁS

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: C9013B-H | BDY58 | SML4014 | 40627 | HEPS0032 | TN5172 | 2SD1252A

 

 
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