EMD4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EMD4 / UMD4N Transistors General purpose (dual digital transistors) EMD4 / UMD4N Features External dimensions (Unit : mm) 1) Both the DTA114Y chip and DTC144E chip in EMD4an EMT6 or UMT6 package. ( ) ( )4 32) Mounting possible with EMT3 or UMT3 automatic ( ) ( )5 26 1mounting machines. ( ) ( )1.21.63) Transistor elements are independent, eliminating inter

EMD4 / UMD4NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline(6) EMT6 UMT6Parameter Value(6) (5) (5) (4) (4) VCC50V(1) (1) (2) (2) IC(MAX.)100mA (3) (3) R147kWEMD4 UMD4N (SC-107C) R2 SOT-353 (SC-88) 47kWParameter ValueVCC-50VIC(MAX.)-100mAR110kW

PEMD48; PUMD48NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k and R1 = 2.2 k, R2 = 47 kRev. 05 13 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package Package configurationNXP JEITA

DISCRETE SEMICONDUCTORS DATA SHEETPEMD4; PUMD4NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = openProduct data sheet 2003 Oct 10Supersedes data of 2002 Jan 14NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD4; PUMD4R1 = 10 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DEMD48 DUAL NPN/PNP PRE-BIASED TRANSISTOR Features Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-563 Mechanical Data Case: SOT-563 Case Material: Molded Plastic, Green Molding Compound. UL

EMD4DXV6Dual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areR1 R2designed to replace

EMD4DXV6Dual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areR1 R2designed to replace

EMD4DXV6T1,EMD4DXV6T5Preferred DevicesDual Bias ResistorTransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor withR1 R2a monolithic bias network consisting of two resistors; a series baseQ1resistor and a base-emitter resistor. These digita

DATA SHEETwww.onsemi.comDual Bias Resistor (3) (2) (1)Transistors R1 R2Q1NPN and PNP Silicon Surface MountQ2Transistors with Monolithic BiasR2 R1Resistor Network(4) (5) (6)EMD4DXV6The BRT (Bias Resistor Transistor) contains a single transistor with6a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digita

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHEMD4GPDual Digital Silicon TransistorDTr1:VOLTAGE 50 Volts CURRENT 30 mAmpereDTr2:VOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter s