Биполярный транзистор EMD4 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: EMD4
Маркировка: D4
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.03 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 68
Корпус транзистора: SC-107C
EMD4 Datasheet (PDF)
emd4 umd4n.pdf
EMD4 / UMD4N Transistors General purpose (dual digital transistors) EMD4 / UMD4N Features External dimensions (Unit : mm) 1) Both the DTA114Y chip and DTC144E chip in EMD4an EMT6 or UMT6 package. ( ) ( )4 32) Mounting possible with EMT3 or UMT3 automatic ( ) ( )5 26 1mounting machines. ( ) ( )1.21.63) Transistor elements are independent, eliminating inter
emd4 umd4n.pdf
EMD4 / UMD4NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline(6) EMT6 UMT6Parameter Value(6) (5) (5) (4) (4) VCC50V(1) (1) (2) (2) IC(MAX.)100mA (3) (3) R147kWEMD4 UMD4N (SC-107C) R2 SOT-353 (SC-88) 47kWParameter ValueVCC-50VIC(MAX.)-100mAR110kW
pemd48 pumd48.pdf
PEMD48; PUMD48NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k and R1 = 2.2 k, R2 = 47 kRev. 05 13 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package Package configurationNXP JEITA
pemd4 pumd4.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMD4; PUMD4NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = openProduct data sheet 2003 Oct 10Supersedes data of 2002 Jan 14NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD4; PUMD4R1 = 10 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
demd48.pdf
DEMD48 DUAL NPN/PNP PRE-BIASED TRANSISTOR Features Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-563 Mechanical Data Case: SOT-563 Case Material: Molded Plastic, Green Molding Compound. UL
nsvemd4dxv6t5g.pdf
EMD4DXV6Dual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areR1 R2designed to replace
emd4dxv6t1g emd4dxv6t5g.pdf
EMD4DXV6Dual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areR1 R2designed to replace
emd4dxv6-d.pdf
EMD4DXV6T1,EMD4DXV6T5Preferred DevicesDual Bias ResistorTransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor withR1 R2a monolithic bias network consisting of two resistors; a series baseQ1resistor and a base-emitter resistor. These digita
emd4dxv6.pdf
DATA SHEETwww.onsemi.comDual Bias Resistor (3) (2) (1)Transistors R1 R2Q1NPN and PNP Silicon Surface MountQ2Transistors with Monolithic BiasR2 R1Resistor Network(4) (5) (6)EMD4DXV6The BRT (Bias Resistor Transistor) contains a single transistor with6a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digita
chemd4gp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHEMD4GPDual Digital Silicon TransistorDTr1:VOLTAGE 50 Volts CURRENT 30 mAmpereDTr2:VOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter s
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050