EMD4DXV6T5G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMD4DXV6T5G
Código: U7
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.357
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
SOT-563
Búsqueda de reemplazo de transistor bipolar EMD4DXV6T5G
EMD4DXV6T5G
Datasheet (PDF)
..1. Size:65K onsemi
emd4dxv6t1g emd4dxv6t5g.pdf
EMD4DXV6Dual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areR1 R2designed to replace
0.1. Size:72K onsemi
nsvemd4dxv6t5g.pdf
EMD4DXV6Dual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areR1 R2designed to replace
6.1. Size:65K onsemi
emd4dxv6-d.pdf
EMD4DXV6T1,EMD4DXV6T5Preferred DevicesDual Bias ResistorTransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor withR1 R2a monolithic bias network consisting of two resistors; a series baseQ1resistor and a base-emitter resistor. These digita
6.2. Size:184K onsemi
emd4dxv6.pdf
DATA SHEETwww.onsemi.comDual Bias Resistor (3) (2) (1)Transistors R1 R2Q1NPN and PNP Silicon Surface MountQ2Transistors with Monolithic BiasR2 R1Resistor Network(4) (5) (6)EMD4DXV6The BRT (Bias Resistor Transistor) contains a single transistor with6a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digita
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