EMD4DXV6T5G - описание и поиск аналогов

 

EMD4DXV6T5G. Аналоги и основные параметры

Наименование производителя: EMD4DXV6T5G

Маркировка: U7

Тип материала: Si

Полярность: Pre-Biased-NPN*PNP

Встроенный резистор цепи смещения R1 = 47 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.357 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT-563

 Аналоги (замена) для EMD4DXV6T5G

- подборⓘ биполярного транзистора по параметрам

 

EMD4DXV6T5G даташит

 ..1. Size:65K  onsemi
emd4dxv6t1g emd4dxv6t5g.pdfpdf_icon

EMD4DXV6T5G

EMD4DXV6 Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with (3) (2) (1) a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are R1 R2 designed to replace

 0.1. Size:72K  onsemi
nsvemd4dxv6t5g.pdfpdf_icon

EMD4DXV6T5G

EMD4DXV6 Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with (3) (2) (1) a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are R1 R2 designed to replace

 6.1. Size:65K  onsemi
emd4dxv6-d.pdfpdf_icon

EMD4DXV6T5G

EMD4DXV6T1, EMD4DXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount http //onsemi.com Transistors with Monolithic Bias Resistor Network (3) (2) (1) The BRT (Bias Resistor Transistor) contains a single transistor with R1 R2 a monolithic bias network consisting of two resistors; a series base Q1 resistor and a base-emitter resistor. These digita

 6.2. Size:184K  onsemi
emd4dxv6.pdfpdf_icon

EMD4DXV6T5G

DATA SHEET www.onsemi.com Dual Bias Resistor (3) (2) (1) Transistors R1 R2 Q1 NPN and PNP Silicon Surface Mount Q2 Transistors with Monolithic Bias R2 R1 Resistor Network (4) (5) (6) EMD4DXV6 The BRT (Bias Resistor Transistor) contains a single transistor with 6 a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digita

Другие транзисторы: EMD29, EMD2FHA, EMD3, EMD30, EMD38, EMD3FHA, EMD4, EMD4DXV6T1G, BD333, EMD5, EMD52, EMD53, EMD59, EMD5DXV6, EMD5DXV6T5G, EMD6, EMD62

 

 

 

 

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