EMD5DXV6 Todos los transistores

 

EMD5DXV6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EMD5DXV6
   Código: U5
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.357 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT-563

 Búsqueda de reemplazo de transistor bipolar EMD5DXV6

 

EMD5DXV6 Datasheet (PDF)

 ..1. Size:59K  onsemi
 emd5dxv6 emd5dxv6t5g.pdf

EMD5DXV6 EMD5DXV6

EMD5DXV6T5GDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base R1 R2resistor and a base-emitter resistor. These digital transistors areQ1designed to r

 0.1. Size:61K  onsemi
 emd5dxv6-d.pdf

EMD5DXV6 EMD5DXV6

EMD5DXV6T1,EMD5DXV6T5Preferred DevicesProduct PreviewDual Bias ResistorTransistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias (3) (2) (1)Resistor NetworkR1 R2Q1The BRT (Bias Resistor Transistor) contains a single transistor withQ2a monolithic bias network consisting of two resistors; a series baseR2 R1resistor and a base-emi

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History: TIX1392 | 2SA794 | DRC3A14Y | AU101

 

 
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