EMD9
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMD9
Código: D9
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.07
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SC-107C
Búsqueda de reemplazo de transistor bipolar EMD9
EMD9
Datasheet (PDF)
..1. Size:560K rohm
emd9.pdf 
EMD9 / UMD9N / IMD9ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutlineEMT6 UMT6Parameter Value(6) (6) (5) (5) (4) (4) VCC50V(1) (1) (2) IC(MAX.)100mA (2) (3) (3) R110kWEMD9 UMD9N (SC-107C) R2 SOT-353 (SC-88) 47kWSMT6(4) (5) (6) (3) Parameter Valu
..2. Size:621K htsemi
emd9.pdf
EMD9 dual digital transistors (NPN+ PNP)SOT-563 FEATURES Two DTA114Y and DTC114Y transistors are built-in a package 1 Marking: D9 Equivalent circuit DTr1 Absolute maximum ratings (Ta=25) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -6~+40 V IO 70 Output current mA IC(MAX) 100 Power dissipation Pd 150 mW Junction temperature Tj 150
0.1. Size:142K philips
pemd9 pumd9.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMD9; PUMD9NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Apr 15Supersedes data of 2003 Nov 04 NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD9; PUMD9R1 = 10 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UN
0.2. Size:1058K nxp
pemd9 pumd9.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.3. Size:1436K rohm
emd9fha umd9nfha imd9afra.pdf
EMD9FHA / UMD9NFHA / IMD9AFRAEMD9 / UMD9N / IMD9ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R110kWEMD9UMD9NEMD9FHA UMD9NFHA(SC-107C)R2 SOT-353 (SC-88)47kWSMT6(4)
0.4. Size:1399K rohm
emd9fha umd9nfha.pdf
EMD9FHA / UMD9NFHA / IMD9AFRAEMD9 / UMD9N / IMD9ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutlineEMT6 UMT6Parameter Value(6)(6) (5) (5) (4) (4)VCC50V(1)(1) (2)IC(MAX.)100mA (2) (3) (3)R110kWEMD9UMD9NEMD9FHA UMD9NFHA(SC-107C)R2 SOT-353 (SC-88)47kWSMT6(4)
0.5. Size:120K chenmko
chemd9gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMD9GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit
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