EMG1
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMG1
Código: G1
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.03
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: SC-107BB
Búsqueda de reemplazo de transistor bipolar EMG1
EMG1
Datasheet (PDF)
..1. Size:439K rohm
emg1.pdf 
EMG1 / UMG1N / FMG1ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) VCC (1) 50V(4) (1) (4) IC(MAX.) (2) 100mA(3) (5) R122kWEMG1 UMG1N R2(SC-107BB) 22kW SOT-353 (SC-88A) SMT5(1) lFeatures(2) 1) Built-In Biasing Resistors, R1 = R2 = 22kW. (5) (4) (3) 2
..2. Size:65K rohm
emg1 umg1n fmg1a.pdf
EMG1 / UMG1N / FMG1A Transistors General purpose (dual digital transistors) EMG1 / UMG1N / FMG1A External dimensions (Unit : mm) Features 1) Two DTC124E chips in a EMT or UMT or SMT EMG1package. ( ) ( )4 32 ( )(5) ( )11.2 Circuit schematic 1.6EMG1 / UMG1N FMG1A(3) (2) (1) (3) (4) (5)ROHM : EMT5 Each lead has same dimensionsR1 R1 R1 R1R2 R2 R2 R2(4
0.1. Size:55K rohm
emg11 umg11n fmg11a.pdf
EMG11 / UMG11N / FMG11ATransistorsEmitter common (dual digital transistors)EMG11 / UMG11N / FMG11A External dimensions (Units : mm) Features1) Two DTA123Js chips in a EMT or UMT or SMTEMG11 package.(4) (3)( )2( ) ( )5 11.21.6 Equivalent circuitEach lead has same dimensionsEMG11 / UMG11N FMG11AROHM : EMT5(3) (2) (1) (3) (4) (5)R1 R1 R1 R1R2 R2 R2 R2U
0.2. Size:92K secos
emg11.pdf
EMG11 Dual N-Ch Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-553 Two DTC123JCA chips in a package AEQUIVALENT CIRCUIT BJD G HF ECMillimeter MillimeterREF. REF. Min. Max. Min. Max.A 1.50 1.70 F 0.09 0.16B 1.50 1.70 G 0.45 0.55C 0.525 0.60 H 0.17
0.3. Size:83K chenmko
chemg1gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMG1GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c
0.4. Size:131K chenmko
chemg11gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMG11GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current
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