EMG6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMG6
Código: G6
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC-107BB
Búsqueda de reemplazo de transistor bipolar EMG6
EMG6 Datasheet (PDF)
emg6.pdf
EMG6 / UMG6N / FMG6ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) VCEO (1) 50V(4) (1) (4) IC(MAX.) (2) 100mA(3) (5) R147kWEMG6 UMG6N (SC-107BB) SOT-353 (SC-88A) SMT5(1) lFeatures(2) (5) 1) Built-In Biasing Resistors.(4) (3) 2) Two DTC144T chips in on
emg6 umg6n fmg6a.pdf
General purpose (dual digital transistors) EMG6 / UMG6N / FMG6A Features Dimensions (Unit : mm) 1) Two DTC144T chips in a EMT or UMT or SMT package. EMG61.2 Equivalent circuit 1.6EMG6 / UMG6N FMG6(3) (2) (1) (3) (4) (5)R1 R1 R1 R1ROHM : EMT5 Each lead has same dimensionsDTr2 DTr1 DTr2 DTr1(4) (5) (2) (1)R1=47k R1=47kUMG6N1.25 Absolute maximum ratings (T
chemg6gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMG6GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
