EMG6 Datasheet. Specs and Replacement
Type Designator: EMG6
SMD Transistor Code: G6
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SC-107BB
EMG6 Substitution
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EMG6 datasheet
EMG6 / UMG6N / FMG6A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT5 UMT5 Parameter Tr1 and Tr2 (3) (5) (2) VCEO (1) 50V (4) (1) (4) IC(MAX.) (2) 100mA (3) (5) R1 47kW EMG6 UMG6N (SC-107BB) SOT-353 (SC-88A) SMT5 (1) lFeatures (2) (5) 1) Built-In Biasing Resistors. (4) (3) 2) Two DTC144T chips in on... See More ⇒
General purpose (dual digital transistors) EMG6 / UMG6N / FMG6A Features Dimensions (Unit mm) 1) Two DTC144T chips in a EMT or UMT or SMT package. EMG6 1.2 Equivalent circuit 1.6 EMG6 / UMG6N FMG6 (3) (2) (1) (3) (4) (5) R1 R1 R1 R1 ROHM EMT5 Each lead has same dimensions DTr2 DTr1 DTr2 DTr1 (4) (5) (2) (1) R1=47k R1=47k UMG6N 1.25 Absolute maximum ratings (T... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHEMG6GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current ... See More ⇒
Detailed specifications: EMF5XV6T5G, EMG1, EMG2, EMG2DXV5T5G, EMG3, EMG4, EMG5, EMG5DXV5T1, D882, EMG8, EMG9, EMH1, EMH10, EMH10FHA, EMH11, EMH11FHA, EMH15
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