EMG6 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMG6
SMD Transistor Code: G6
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-107BB
EMG6 Transistor Equivalent Substitute - Cross-Reference Search
EMG6 Datasheet (PDF)
emg6.pdf
EMG6 / UMG6N / FMG6ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT5 UMT5Parameter Tr1 and Tr2(3) (5) (2) VCEO (1) 50V(4) (1) (4) IC(MAX.) (2) 100mA(3) (5) R147kWEMG6 UMG6N (SC-107BB) SOT-353 (SC-88A) SMT5(1) lFeatures(2) (5) 1) Built-In Biasing Resistors.(4) (3) 2) Two DTC144T chips in on
emg6 umg6n fmg6a.pdf
General purpose (dual digital transistors) EMG6 / UMG6N / FMG6A Features Dimensions (Unit : mm) 1) Two DTC144T chips in a EMT or UMT or SMT package. EMG61.2 Equivalent circuit 1.6EMG6 / UMG6N FMG6(3) (2) (1) (3) (4) (5)R1 R1 R1 R1ROHM : EMT5 Each lead has same dimensionsDTr2 DTr1 DTr2 DTr1(4) (5) (2) (1)R1=47k R1=47kUMG6N1.25 Absolute maximum ratings (T
chemg6gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMG6GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N93
