EMH10FHA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMH10FHA
Código: H10
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: EMT6
- Selección de transistores por parámetros
EMH10FHA Datasheet (PDF)
emh10fha umh10nfha.pdf

AEC-Q101 QualifiedGeneral purpose (dual digital transistors) EMH10 / UMH10N EMH10FHA / UMH10NFHAStructure Dimensions (Unit : mm)Epitaxial planar type NPN silicon transistor EMH10FHAEMH10(Built-in resistor type)(4) (3)(5) (2)(6) (1)Features1.21.61) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machi
pemh10 pumh10.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPEMH10; PUMH10NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2003 Oct 20Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH10; PUMH10R1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX.
emh10.pdf

General purpose (dual digital transistors) EMH10 / UMH10N Structure Dimensions (Unit : mm) Epitaxial planar type NPN silicon transistor EMH10(Built-in resistor type) (4) (3)(5) (2)(6) (1)Features1.21.61) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eli
emh10.pdf

EMH10 General purpose transistors (dual transistors)SOT-563 FEATURES Two DTC123J chips in a package Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. 1 Mounting cost and area be cut in half. Marking: H10 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitSupply
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC4622 | SGSIF444 | 2SC829Z | PN4142 | SML7A12 | 3CA2050 | BUW48
History: 2SC4622 | SGSIF444 | 2SC829Z | PN4142 | SML7A12 | 3CA2050 | BUW48



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