EMH2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMH2
Código: H2
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 68
Encapsulados: SC-107C
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EMH2 datasheet
..1. Size:457K rohm
emh2.pdf 
EMH2 / UMH2N / IMH2A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) 100mA (2) (2) (3) (3) R1 47kW EMH2 UMH2N R2 (SC-107C) 47kW SOT-353 (SC-88) SMT6 (4) lFeatures (5) (6) 1) Built-In Biasing Resistors, R1 = R2 =
..2. Size:312K htsemi
emh2.pdf
EMH2 General purpose transistors (dual transistors) SOT-563 FEATURES Two DTC144Es chip in a package Mounting possible with SOT-563 automatic mounting machines. 1 Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. Marking H2 Equivalent circuit Absolute maximum ratings (Ta=25 ) Parameter Symbol Limits Unit Supply
0.1. Size:138K philips
pemh2 pumh2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PEMH2; PUMH2 NPN/NPN resistor-equipped transistors; R1 = 47 k , R2 = 47 k Product data sheet 2004 Apr 14 Supersedes data of 2003 Oct 02 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; PEMH2; PUMH2 R1 = 47 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT
0.2. Size:57K philips
pemh24 pumh24.pdf
PEMH24; PUMH24 NPN/NPN resistor-equipped transistors; R1 = 100 k , R2 = 100 k Rev. 04 18 May 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1 Product overview Type number Package NPN/PNP PNP/PNP complement complement Philips JEITA PEMH24 SOT666 - PEMD24 PEMB24 PUMH24 SOT363 SC-88 PUMD24 PUMB24 1.2 Feat
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emh2412.pdf
EMH2412 Ordering number ENA1315 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2412 Applications Features Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditio
0.4. Size:270K sanyo
emh2411r.pdf
EMH2411R Ordering number ENA1421 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2411R Applications Features Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Condit
0.5. Size:612K sanyo
emh2604.pdf
EMH2604 Ordering number EN9006A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device EMH2604 Applications Features Nch + Pch MOSFET ON-resistance Nch RDS(on)1=34m (typ.) Pch RDS(on)1=65m (typ.) 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symb
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emh2308.pdf
EMH2308 Ordering number ENA1445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device EMH2308 Applications Features The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Paramete
0.7. Size:574K sanyo
emh2801.pdf
EMH2801 Ordering number ENA1821A SANYO Semiconductors DATA SHEET MOSFET P-Channel Silicon MOSFET SBD Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting [MOSFET] Low ON-resistance 1.8V dr
0.8. Size:307K sanyo
emh2408.pdf
Ordering number ENA1170 EMH2408 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2408 Applications Features The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive. Halogen free cpmpliance. Specifications Absolute Maximum Ra
0.9. Size:346K sanyo
emh2409.pdf
EMH2409 Ordering number ENA1890 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2409 Applications Features The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting 4V drive Halogen free compliance Specifications at Ta=25 C Absolute
0.10. Size:306K sanyo
emh2407.pdf
Ordering number ENA1141B EMH2407 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2407 Applications Features Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source
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pemh20 pumh20.pdf
PEMH20; PUMH20 NPN/NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Rev. 04 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN resistor-equipped transistors. Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP JEITA PEMH20 SOT666 - PEMD20 PEMB20 PUMH20 SOT363 SC-88 PUMD20 PUMB20 1.2 Features
0.12. Size:367K rohm
emh25.pdf
EMH25 Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 Parameter Tr1 and Tr2 (6) VCC 50V (5) (4) (1) IC(MAX.) 100mA (2) (3) R1 4.7kW EMH25 R2 (SC-107C) 47kW lFeatures lInner circuit 1) Built-In Biasing Resistors. 2) Two DTC143Z chips in one package. OUT IN GND (6) (5) (4) 3) Built-in bias resistors en
0.13. Size:1331K rohm
emh2fha umh2nfha imh2afra.pdf
EMH2 / UMH2N / IMH2A EMH2FHA / UMH2NFHA / IMH2AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) 100mA (2) (2) (3) (3) R1 47kW EMH2 UMH2N EMH2FHA UMH2NFHA R2 (SC-107C) 47kW SOT-353 (SC-88) SMT6
0.14. Size:1287K rohm
emh2fha umh2nfha.pdf
EMH2 / UMH2N / IMH2A EMH2FHA / UMH2NFHA / IMH2AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) 100mA (2) (2) (3) (3) R1 47kW EMH2 UMH2N EMH2FHA UMH2NFHA R2 (SC-107C) 47kW SOT-353 (SC-88) SMT6
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emh2314.pdf
Ordering number EN8759A EMH2314 Power MOSFET http //onsemi.com 12V, 37m , 5A, Dual P-Channel Features ON-resistance RDS(on)1=28m (typ.) Halogen free compliance 1.8V drive Protection Diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Value Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VG
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emh2417r.pdf
Ordering number ENA2313A EMH2417R N-Channel Power MOSFET http //onsemi.com 12V, 11A, 10m , Dual EMH8 Common Drain Features Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings
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chemh2gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHEMH2GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabilit
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