EMH2 / UMH2N / IMH2ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.)100mA (2) (2) (3) (3) R147kWEMH2 UMH2N R2(SC-107C) 47kW SOT-353 (SC-88) SMT6(4) lFeatures (5) (6) 1) Built-In Biasing Resistors, R1 = R2 =

EMH2 General purpose transistors (dual transistors)SOT-563 FEATURES Two DTC144Es chip in a package Mounting possible with SOT-563 automatic mounting machines. 1 Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. Marking: H2 Equivalent circuit Absolute maximum ratings (Ta=25) Parameter Symbol Limits UnitSupply

DISCRETE SEMICONDUCTORS DATA SHEETPEMH2; PUMH2NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2004 Apr 14Supersedes data of 2003 Oct 02 NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH2; PUMH2R1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

PEMH24; PUMH24NPN/NPN resistor-equipped transistors;R1 = 100 k, R2 = 100 kRev. 04 18 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1: Product overviewType number Package NPN/PNP PNP/PNPcomplement complementPhilips JEITAPEMH24 SOT666 - PEMD24 PEMB24PUMH24 SOT363 SC-88 PUMD24 PUMB241.2 Feat

EMH2412Ordering number : ENA1315SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2412ApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditio

EMH2411ROrdering number : ENA1421SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2411RApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Condit

EMH2604Ordering number : EN9006ASANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceEMH2604ApplicationsFeatures Nch + Pch MOSFET ON-resistance Nch : RDS(on)1=34m (typ.) Pch : RDS(on)1=65m (typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symb

EMH2308Ordering number : ENA1445SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2308ApplicationsFeatures The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParamete

EMH2801Ordering number : ENA1821ASANYO SemiconductorsDATA SHEETMOSFET : P-Channel Silicon MOSFETSBD : Schottky Barrier DiodeEMH2801General-Purpose Switching DeviceApplicationsFeatures Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting [MOSFET] Low ON-resistance 1.8V dr

Ordering number : ENA1170 EMH2408SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2408ApplicationsFeatures The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,thereby enabling high-density mounting. 1.8V drive. Halogen free cpmpliance.SpecificationsAbsolute Maximum Ra

EMH2409Ordering number : ENA1890SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2409ApplicationsFeatures The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute

Ordering number : ENA1141B EMH2407SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2407ApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source

PEMH20; PUMH20NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kRev. 04 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN resistor-equipped transistors.Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH20 SOT666 - PEMD20 PEMB20PUMH20 SOT363 SC-88 PUMD20 PUMB201.2 Features

EMH25DatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6Parameter Tr1 and Tr2(6) VCC50V (5) (4) (1) IC(MAX.)100mA (2) (3) R14.7kWEMH25 R2(SC-107C) 47kWlFeatures lInner circuit1) Built-In Biasing Resistors.2) Two DTC143Z chips in one package.OUT IN GND (6) (5) (4) 3) Built-in bias resistors en

EMH2 / UMH2N / IMH2AEMH2FHA / UMH2NFHA / IMH2AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.)100mA (2) (2) (3) (3) R147kWEMH2 UMH2N EMH2FHA UMH2NFHAR2(SC-107C) 47kW SOT-353 (SC-88) SMT6

EMH2 / UMH2N / IMH2AEMH2FHA / UMH2NFHA / IMH2AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.)100mA (2) (2) (3) (3) R147kWEMH2 UMH2N EMH2FHA UMH2NFHAR2(SC-107C) 47kW SOT-353 (SC-88) SMT6

Ordering number : ENA2267A EMH2418R N-Channel Power MOSFEThttp://onsemi.com 24V, 9A, 15m, Dual EMH8 Electrical Connection Features N-channel Low On-resistance 2.5V drive8 7 6 5 Common-Drain Type Protection diode in Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Spe

Ordering number : EN8759AEMH2314Power MOSFEThttp://onsemi.com 12V, 37m , 5A, Dual P-ChannelFeatures ON-resistance RDS(on)1=28m (typ.) Halogen free compliance 1.8V drive Protection Diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Value UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VG

Ordering number : ENA2313A EMH2417R N-Channel Power MOSFET http://onsemi.com 12V, 11A, 10m, Dual EMH8 Common Drain Features Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings

CHENMKO ENTERPRISE CO.,LTDCHEMH2GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit