LDTC113ZET1G Todos los transistores

 

LDTC113ZET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LDTC113ZET1G
   Código: N7
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 33
   Paquete / Cubierta: SC-89
 

 Búsqueda de reemplazo de LDTC113ZET1G

   - Selección ⓘ de transistores por parámetros

 

LDTC113ZET1G Datasheet (PDF)

 ..1. Size:272K  lrc
ldtc113zet1g.pdf pdf_icon

LDTC113ZET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkLDTC113ZET1G Applications S-LDTC113ZET1GInverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 3resistors (see equivalent circuit). 2) The bias resi

 8.1. Size:420K  lrc
ldtc114wet1g.pdf pdf_icon

LDTC113ZET1G

 8.2. Size:325K  lrc
ldtc114get1g.pdf pdf_icon

LDTC113ZET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC114GET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 8.3. Size:467K  lrc
ldtc114em3t5g.pdf pdf_icon

LDTC113ZET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsLDTC114EM3T5GWith Monolithic Bias Resistor NetworkSeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bias networkconsisting of two resi

Otros transistores... LDTB114GKT1G , LDTB114TKT1G , LDTB123EET1G , LDTB123TET1G , LDTB123YET1G , LDTB143EET1G , LDTB143TKT1G , LDTBG12GPT1G , TIP3055 , LDTC114EET1G , LDTC114EM3T5G , LDTC114GET1G , LDTC114TET1G , LDTC114TM3T5G , LDTC114WET1G , LDTC114YET1G , LDTC114YM3T5G .

History: 2N2286

 

 
Back to Top

 


 
.