LDTC113ZET1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LDTC113ZET1G
Código: N7
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 33
Paquete / Cubierta:
SC-89
Búsqueda de reemplazo de transistor bipolar LDTC113ZET1G
LDTC113ZET1G
Datasheet (PDF)
..1. Size:272K lrc
ldtc113zet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkLDTC113ZET1G Applications S-LDTC113ZET1GInverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 3resistors (see equivalent circuit). 2) The bias resi
8.2. Size:325K lrc
ldtc114get1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC114GET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
8.3. Size:467K lrc
ldtc114em3t5g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsLDTC114EM3T5GWith Monolithic Bias Resistor NetworkSeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bias networkconsisting of two resi
8.6. Size:353K lrc
ldtc115tet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC115TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
8.7. Size:333K lrc
ldtc115get1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC115GET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
8.8. Size:435K lrc
ldtc114eet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesNPN Silicon Surface Mount TransistorsS-LDTC114EET1G Serieswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons
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