2SA104 Todos los transistores

2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 Audio Frequency Amplifier Applications Unit mm Small package. High breakdown voltage V = -120 V CEO High h h = 200 700 FE FE Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC2459. Maxi

2SA1048(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1048(L) Audio Frequency Amplifier Applications Unit mm Low Noise Audio Frequency Applications Small package. High voltage V = -50 V (min) CEO High h h = 70 400 FE FE Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise NF = 0.2dB (typ.), 3dB (m

2SA1048 -0.15 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92S FEATURES Small Package High Voltage Millimeter REF. Min. Max. Excellent hFE Linearity A 3.90 4.10 B 3.05 3.25 C 1.42 1.62 D 15.1 15.5 E 2.97 3.27 F 0.66 0.86 G 2.44 2.64 CLASSIFICATION O

JMnic Product Specification Silicon PNP Power Transistors 2SA1044 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symb

JMnic Product Specification Silicon PNP Power Transistors 2SA1043 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symb

JMnic Product Specification Silicon PNP Power Transistors 2SA1041 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symb

2SA1048 TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage VCEO=-50V(Min.) High hFE hFE=70 400 Low noise NF=1dB(Typ.),10dB(Max.) Complementary to 2SC2458 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in

isc Silicon PNP Darlington Power Transistor 2SA1046 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications High frequency power amplifier DC-DC converters ABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor 2SA1044 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -70V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SC2434 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications High frequency power amplifier DC-DC converters

isc Silicon PNP Power Transistor 2SA1040 DESCRIPTION High Current Capability Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC2430 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching , high frequency power amplifer, switching regulator and

isc Silicon PNP Power Transistor 2SA1043 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SC2433 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications power amplifier DC-DC converters ABSOLUTE MAX

isc Silicon PNP Power Transistor 2SA1042 DESCRIPTION High Current Capability Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -70V(Min.) (BR)CEO Complement to Type 2SC2432 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high voltage switching systems. ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SA1041 DESCRIPTION High Current Capability Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC2431 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high voltage switching systems. ABSOLUTE MAXIMUM RATINGS(T =2