2SA1040 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1040 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 60 MHz
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hFE): 35
Encapsulados: TO3
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2SA1040 datasheet
..1. Size:194K inchange semiconductor
2sa1040.pdf 
isc Silicon PNP Power Transistor 2SA1040 DESCRIPTION High Current Capability Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC2430 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching , high frequency power amplifer, switching regulator and
8.2. Size:217K toshiba
2sa1049.pdf
2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 Audio Frequency Amplifier Applications Unit mm Small package. High breakdown voltage V = -120 V CEO High h h = 200 700 FE FE Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC2459. Maxi
8.3. Size:237K toshiba
2sa1048 l.pdf
2SA1048(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1048(L) Audio Frequency Amplifier Applications Unit mm Low Noise Audio Frequency Applications Small package. High voltage V = -50 V (min) CEO High h h = 70 400 FE FE Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise NF = 0.2dB (typ.), 3dB (m
8.6. Size:423K secos
2sa1048.pdf
2SA1048 -0.15 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92S FEATURES Small Package High Voltage Millimeter REF. Min. Max. Excellent hFE Linearity A 3.90 4.10 B 3.05 3.25 C 1.42 1.62 D 15.1 15.5 E 2.97 3.27 F 0.66 0.86 G 2.44 2.64 CLASSIFICATION O
8.7. Size:146K jmnic
2sa1044.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1044 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symb
8.8. Size:146K jmnic
2sa1043.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1043 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symb
8.9. Size:146K jmnic
2sa1041.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1041 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS Power switching applications High frequency power amplifier Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symb
8.10. Size:203K lge
2sa1048 to-92s.pdf
2SA1048 TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage VCEO=-50V(Min.) High hFE hFE=70 400 Low noise NF=1dB(Typ.),10dB(Max.) Complementary to 2SC2458 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in
8.11. Size:168K inchange semiconductor
2sa1046.pdf
isc Silicon PNP Darlington Power Transistor 2SA1046 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications High frequency power amplifier DC-DC converters ABSOLUTE MAXIMUM
8.12. Size:195K inchange semiconductor
2sa1044.pdf
isc Silicon PNP Power Transistor 2SA1044 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -70V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SC2434 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications High frequency power amplifier DC-DC converters
8.13. Size:194K inchange semiconductor
2sa1043.pdf
isc Silicon PNP Power Transistor 2SA1043 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SC2433 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications power amplifier DC-DC converters ABSOLUTE MAX
8.14. Size:221K inchange semiconductor
2sa1042.pdf
isc Silicon PNP Power Transistor 2SA1042 DESCRIPTION High Current Capability Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -70V(Min.) (BR)CEO Complement to Type 2SC2432 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high voltage switching systems. ABSOLUTE MAXIMUM RATINGS(T =25
8.15. Size:222K inchange semiconductor
2sa1041.pdf
isc Silicon PNP Power Transistor 2SA1041 DESCRIPTION High Current Capability Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC2431 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high voltage switching systems. ABSOLUTE MAXIMUM RATINGS(T =2
Otros transistores... 2SA1036, 2SA1036K, 2SA1037, 2SA1037K, 2SA1037KLN, 2SA1038, 2SA1039, 2SA104, 2SC2073, 2SA1041, 2SA1042, 2SA1043, 2SA1044, 2SA1045, 2SA1046, 2SA1047, 2SA1048
