MMUN2111LT3G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMUN2111LT3G
Código: A6A
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.246
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta:
SOT-23
Búsqueda de reemplazo de transistor bipolar MMUN2111LT3G
MMUN2111LT3G
Datasheet (PDF)
4.1. Size:188K motorola
mmun2111lt1rev0d.pdf
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4.2. Size:190K onsemi
mmun2111lt1.pdf
MMUN2111LT1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a serie
6.1. Size:267K motorola
mmun2111.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMUN2111LT1/DBias Resistor TransistorMMUN2111LT1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a s
6.2. Size:199K wietron
mmun2111.pdf
MMUN2111 SeriesBias Resistor TransistorCOLLECTOR33PNP Silicon R 11BASER 2122EMITTERSOT-23( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device Dissipa
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