MMUN2111LT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMUN2111LT3G
Código: A6A
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.246 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar MMUN2111LT3G
MMUN2111LT3G Datasheet (PDF)
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMUN2111LT1/D Bias Resistor Transistor MMUN2111LT1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a s
Otros transistores... MMBTRC106SS , MMBTRC116SS , MMBTRC117SS , MMBTRC118SS , MMBTRC119SS , MMBTRC120SS , MMBTRC121SS , MMUN2111LT1G , C1815 , MMUN2112LT1G , MMUN2113LT1G , MMUN2113LT3G , MMUN2114LT1G , MMUN2114LT3G , MMUN2115LT1G , MMUN2116LT1G , MMUN2130L .
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