MMUN2131LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMUN2131LT1G 📄📄
Código: A6H
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.246 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 8
Encapsulados: SOT-23
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MMUN2131LT1G datasheet
0.1. Size:109K onsemi
nsvmmun2131lt1g.pdf 
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mmun2135.pdf
MMUN2135 Bias Resistor Transistor COLLECT OR 3 3 PNP Silicon R 1 1 BASE R 2 1 2 2 EMITTER SOT-23 ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit Collector-Emitter Voltage V 50 CEO Vdc Vdc Collector-Base Voltage VCBO 50 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Max Unit Characteristics Symbol Total Device Dissipation F
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