MMUN2212LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMUN2212LT1G
Código: A8B
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.246 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar MMUN2212LT1G
MMUN2212LT1G Datasheet (PDF)
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MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The BRT (Bias Resistor COLLECTOR R1 (OUTPUT) Transistor) contains a single transistor
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Lead Free RoHS Compliant MEI
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MMUN2217L, NSVMMUN2217L Digital Transistors (BRT) R1 = 4.7 kW, R2 = 10 kW NPN Transistors with Monolithic Bias http //onsemi.com Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The Bias Resistor COLLECTOR Transistor (BRT) contains a single transistor with a monolithic bias (OUTPU
Otros transistores... MMUN2140L , MMUN2140LT1G , MMUN2141L , MMUN2141LT1G , MMUN2211LT1 , MMUN2211LT1G , MMUN2211LT3G , MMUN2212LT1 , 2SC1815 , MMUN2213LT1 , MMUN2213LT1G , MMUN2214LT1 , MMUN2214LT1G , MMUN2215LT1 , MMUN2215LT1G , MMUN2216LT1 , MMUN2216LT1G .
History: GD210 | 2SD226B | 2SC3514 | FJAF6810 | SUR529H | BFV22 | DDTA114YUA
History: GD210 | 2SD226B | 2SC3514 | FJAF6810 | SUR529H | BFV22 | DDTA114YUA
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