2SA1050 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1050
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 70 MHz
Capacitancia de salida (Cc): 350 pF
Ganancia de corriente contínua (hfe): 55
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2SA1050
2SA1050 Datasheet (PDF)
2sa1050.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1050 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
2sa1050.pdf
isc Silicon PNP Power Transistor 2SA1050DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -140V(Min.)(BR)CEOComplement to Type 2SC2460Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2sa1052.pdf
2SA1052Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1052Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mACollector powe
2sa1051.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1051 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
2sa1052.pdf
SMD Type orSMD Type TransistICsPNP Transistors2SA1052SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13Features1 2Low frequency amplifier+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -30 VCollector to emitter voltage VCEO -30 VEmitter to base volta
2sa1051.pdf
isc Silicon PNP Power Transistor 2SA1051DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SD1181 | MUN5315DW
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D