Биполярный транзистор 2SA1050
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1050
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 100
W
Макcимально допустимое напряжение коллектор-база (Ucb): 140
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 12
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 70
MHz
Ёмкость коллекторного перехода (Cc): 350
pf
Статический коэффициент передачи тока (hfe): 55
Корпус транзистора:
TO3
Аналоги (замена) для 2SA1050
2SA1050
Datasheet (PDF)
..1. Size:145K jmnic
2sa1050.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1050 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
..2. Size:198K inchange semiconductor
2sa1050.pdf 
isc Silicon PNP Power Transistor 2SA1050DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -140V(Min.)(BR)CEOComplement to Type 2SC2460Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
8.1. Size:24K hitachi
2sa1052.pdf 
2SA1052Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1052Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mACollector powe
8.2. Size:146K jmnic
2sa1051.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1051 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
8.3. Size:809K kexin
2sa1052.pdf 
SMD Type orSMD Type TransistICsPNP Transistors2SA1052SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13Features1 2Low frequency amplifier+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -30 VCollector to emitter voltage VCEO -30 VEmitter to base volta
8.4. Size:198K inchange semiconductor
2sa1051.pdf 
isc Silicon PNP Power Transistor 2SA1051DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
Другие транзисторы... 2N3200
, 2N3201
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, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
