2SA1051
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1051
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 135
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60
MHz
Capacitancia de salida (Cc): 350
pF
Ganancia de corriente contínua (hfe): 55
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SA1051
2SA1051
Datasheet (PDF)
..1. Size:146K jmnic
2sa1051.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1051 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
..2. Size:198K inchange semiconductor
2sa1051.pdf
isc Silicon PNP Power Transistor 2SA1051DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
8.1. Size:24K hitachi
2sa1052.pdf
2SA1052Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1052Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mACollector powe
8.2. Size:145K jmnic
2sa1050.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1050 DESCRIPTION With TO-3 package High transition frequency Excellent safe operating area APPLICATIONS For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=
8.3. Size:809K kexin
2sa1052.pdf
SMD Type orSMD Type TransistICsPNP Transistors2SA1052SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13Features1 2Low frequency amplifier+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -30 VCollector to emitter voltage VCEO -30 VEmitter to base volta
8.4. Size:198K inchange semiconductor
2sa1050.pdf
isc Silicon PNP Power Transistor 2SA1050DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = -140V(Min.)(BR)CEOComplement to Type 2SC2460Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Otros transistores... 2SA1048O
, 2SA1048Y
, 2SA1049
, 2SA1049BL
, 2SA1049GR
, 2SA105
, 2SA1050
, 2SA1050A
, A1013
, 2SA1051A
, 2SA1052
, 2SA1052B
, 2SA1052C
, 2SA1052D
, 2SA1053
, 2SA1054
, 2SA1055
.
