2SA1051 Specs and Replacement
Type Designator: 2SA1051
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO3
2SA1051 Substitution
- BJT ⓘ Cross-Reference Search
2SA1051 datasheet
isc Silicon PNP Power Transistor 2SA1051 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
2SA1052 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1052 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Emitter current IE 100 mA Collector powe... See More ⇒
Detailed specifications: 2SA1048O, 2SA1048Y, 2SA1049, 2SA1049BL, 2SA1049GR, 2SA105, 2SA1050, 2SA1050A, SS8050, 2SA1051A, 2SA1052, 2SA1052B, 2SA1052C, 2SA1052D, 2SA1053, 2SA1054, 2SA1055
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