MUN2116T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MUN2116T1G
Código: 6F
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.23 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SC-59
Búsqueda de reemplazo de transistor bipolar MUN2116T1G
MUN2116T1G Datasheet (PDF)
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN2111T1/D Bias Resistor Transistor MUN2111T1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a singl
Otros transistores... MMUN2241LT1G , MUN2111T1G , MUN2112T1G , MUN2113T1G , MUN2114T1G , MUN2115 , MUN2115T1G , MUN2116 , BC639 , MUN2130 , MUN2130T1G , MUN2131 , MUN2131T1G , MUN2132 , MUN2132T1G , MUN2133 , MUN2133T1G .
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