MUN5135DW1T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN5135DW1T1G  📄📄 

Código: 0M

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.187 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT-363

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MUN5135DW1T1G datasheet

 0.1. Size:94K  onsemi
 nsvmun5135dw1t1g.pdf pdf_icon

MUN5135DW1T1G

MUN5135DW1, NSBA123JDXV6, NSBA123JDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol

 7.1. Size:171K  onsemi
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MUN5135DW1T1G

MUN5111T1G Series, SMUN5111T1G, NSVMUN5111T1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network PNP SILICON This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor BIAS RESISTOR Transistor (BRT) contains a single transistor with a

 7.2. Size:171K  lrc
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MUN5135DW1T1G

MOSTRAR MÁS

Otros transistores... MUN5132DW1, MUN5132DW1T1G, MUN5132T1G, MUN5133DW1T1G, MUN5133T1G, MUN5134DW1, MUN5134DW1T1G, MUN5134T1G, TIP31, MUN5135T1G, MUN5136DW1, MUN5136DW1T1G, MUN5136T1G, MUN5137DW1, MUN5137DW1T1G, MUN5137T1G, MUN5138