MUN5136DW1T1G Todos los transistores

 

MUN5136DW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MUN5136DW1T1G
   Código: 0N
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 100 kOhm
   Resistencia Base-Emisor R2 = 100 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.187 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT-363
 

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MUN5136DW1T1G Datasheet (PDF)

 4.1. Size:104K  onsemi
mun5136dw1.pdf pdf_icon

MUN5136DW1T1G

MUN5136DW1,NSBA115EDXV6Dual PNP Bias ResistorTransistorsR1 = 100 kW, R2 = 100 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias

 7.1. Size:171K  onsemi
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MUN5136DW1T1G

MUN5111T1G Series,SMUN5111T1G,NSVMUN5111T1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkPNP SILICONThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorBIAS RESISTORTransistor (BRT) contains a single transistor with a

Otros transistores... MUN5133DW1T1G , MUN5133T1G , MUN5134DW1 , MUN5134DW1T1G , MUN5134T1G , MUN5135DW1T1G , MUN5135T1G , MUN5136DW1 , TIP42 , MUN5136T1G , MUN5137DW1 , MUN5137DW1T1G , MUN5137T1G , MUN5138 , MUN5138T1G , MUN5140 , MUN5140T1G .

History: PMBT3905

 

 
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