MUN5136DW1T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN5136DW1T1G  📄📄 

Código: 0N

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 100 kOhm

Resistencia Base-Emisor R2 = 100 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.187 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT-363

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MUN5136DW1T1G datasheet

 4.1. Size:104K  onsemi
 mun5136dw1.pdf pdf_icon

MUN5136DW1T1G

MUN5136DW1, NSBA115EDXV6 Dual PNP Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias

 7.1. Size:171K  onsemi
 mun5111t1g mun5112t1g mun5113t1g mun5114t1g mun5115t1g mun5116t1g mun5130t1g mun5131t1g mun5132t1g mun5133t1g mun5134t1g mun5135t1g mun5136t1g mun5137t1g.pdf pdf_icon

MUN5136DW1T1G

MUN5111T1G Series, SMUN5111T1G, NSVMUN5111T1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network PNP SILICON This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor BIAS RESISTOR Transistor (BRT) contains a single transistor with a

 7.2. Size:171K  lrc
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MUN5136DW1T1G

MOSTRAR MÁS

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