MUN5211T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN5211T1G  📄📄 

Código: 8A

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.202 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 35

Encapsulados: SOT-323

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MUN5211T1G datasheet

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5211T1G NPN Silicon Surface Mount Transistor Series with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 1 Transistor) contains a single transistor with a monolithic bias network con- 2 sisting of two r

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN5211T1/D Bias Resistor Transistor MUN5211T1 NPN Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a sing

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MUN5211T1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http //onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series ba

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