MUN5231DW1T1G Todos los transistores

 

MUN5231DW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MUN5231DW1T1G
   Código: 7H
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.187 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: SOT-363
 

 Búsqueda de reemplazo de MUN5231DW1T1G

   - Selección ⓘ de transistores por parámetros

 

Principales características: MUN5231DW1T1G

 ..1. Size:191K  onsemi
mun5211dw1t1g mun5212dw1t1g mun5213dw1t1g mun5214dw1t1g mun5215dw1t1g mun5216dw1t1g mun5230dw1t1g mun5231dw1t1g.pdf pdf_icon

MUN5231DW1T1G

MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with SOT-363 a monolithic bias network consisting of two resistors; a series base CASE 419B STYLE 1 resistor and a base-emitter resistor. The

 0.1. Size:207K  lrc
lmun5211dw1t1g lmun5212dw1t1g lmun5213dw1t1g lmun5214dw1t1g lmun5215dw1t1g lmun5216dw1t1g lmun5230dw1t1g lmun5231dw1t1g.pdf pdf_icon

MUN5231DW1T1G

LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors LMUN5211DW1T1G NPN Silicon Surface Mount Transistors Series with Monolithic Bias Resistor Network S-LMUN5211DW1T1G Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These 6 5 digital transistor

 4.1. Size:132K  onsemi
mun5231dw1.pdf pdf_icon

MUN5231DW1T1G

MUN5231DW1, NSBC123EDXV6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolith

 7.1. Size:389K  onsemi
mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdf pdf_icon

MUN5231DW1T1G

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c

Otros transistores... MUN5214T1G , MUN5215DW1T1G , MUN5215T1G , MUN5216DW1T1G , MUN5216T1G , MUN5230DW1T1G , MUN5230T1G , MUN5231DW1 , BC639 , MUN5231T1G , MUN5232DW1T1G , MUN5232T1G , MUN5233DW1T1G , MUN5233T1G , MUN5234DW1 , MUN5234DW1T1G , MUN5234T1G .

 

 
Back to Top

 


 
.