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MUN5311DW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MUN5311DW1T1G
   Código: 11
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.187 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SOT-363
 

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MUN5311DW1T1G Datasheet (PDF)

 ..1. Size:276K  onsemi
 mun5311dw1t1g mun5312dw1t1g mun5313dw1t1g mun5314dw1t1g mun5315dw1t1g mun5316dw1t1g mun5330dw1t1g mun5331dw1t1g mun5332dw1t1g mun5333dw1t1g mun5334dw1t1g mun5335dw1t1g.pdf pdf_icon

MUN5311DW1T1G

MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and

 2.1. Size:308K  motorola
 mun5311dw1t1rev5.pdf pdf_icon

MUN5311DW1T1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5311DW1T1/DMUN5311DW1T1Dual Bias Resistor TransistorsSERIESNPN and PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkMotorola Preferred DevicesThe BRT (Bias Resistor Transistor) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistor a

 2.2. Size:824K  onsemi
 mun5311dw1t1-d.pdf pdf_icon

MUN5311DW1T1G

MUN5311DW1T1G SeriesPreferred DevicesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comhttp://onsemi.comThe Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transi

 3.1. Size:89K  onsemi
 mun5311dw1t2g.pdf pdf_icon

MUN5311DW1T1G

MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

MOSTRAR MÁS

Otros transistores... MUN5237DW1T1G , MUN5237T1G , MUN5238 , MUN5238T1G , MUN5240 , MUN5240T1G , MUN5241 , MUN5241T1G , BD139 , MUN5312DW1T1G , MUN5313DW1T1G , MUN5314DW1T1G , MUN5315DW1T1G , MUN5316DW1T1G , MUN5330DW1T1G , MUN5331DW1 , MUN5331DW1T1G .

 

 
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