MUN5311DW1T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MUN5311DW1T1G
SMD Transistor Code: 11
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.187
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: SOT-363
MUN5311DW1T1G Transistor Equivalent Substitute - Cross-Reference Search
MUN5311DW1T1G Datasheet (PDF)
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN5311DW1T1/DMUN5311DW1T1Dual Bias Resistor TransistorsSERIESNPN and PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkMotorola Preferred DevicesThe BRT (Bias Resistor Transistor) contains a single transistor with amonolithic bias network consisting of two resistors; a series base resistor a
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MUN5311DW1T1G SeriesPreferred DevicesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comhttp://onsemi.comThe Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transi
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MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
