2SA106 Todos los transistores

 0.1. Size:265K  renesas
 2sa1069a-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:234K  renesas
 2sa1069-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.3. Size:136K  nec
 2sa1069 2sa1069a.pdf

DATA SHEET SILICON POWER TRANSISTORS 2SA1069, 1069A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1069/1069A are the mold power transistors developed for high-speed switching, and is ideal for use as a driver in devices such Part No. Pac age as switching regulators, DC/DC converters, and high-frequency power 2SA1069 -220AB amplifiers. 2SA10

 0.4. Size:89K  panasonic
 2sa1062 2sc2486.pdf

 0.5. Size:102K  panasonic
 2sa1061 2sc2485.pdf

 0.6. Size:161K  jmnic
 2sa1069 2sa1069a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION With TO-220 package Complement to type 2SC2516/2516A Low collector saturation voltage APPLICATIONS Switching regulators DC-DC converters High-frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (

 0.7. Size:152K  jmnic
 2sa1065.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1065 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency Complement to type 2SC2489 APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3

 0.8. Size:260K  jmnic
 2sa1060.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1060 DESCRIPTION With TO-3PN package Complement to type 2SC2484 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat

 0.9. Size:146K  jmnic
 2sa1067.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1067 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= )

 0.10. Size:146K  jmnic
 2sa1068.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1068 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= )

 0.11. Size:152K  jmnic
 2sa1064.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1064 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2SC2488 High transition frequency APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3

 0.12. Size:173K  jmnic
 2sa1063.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1063 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS Designed for general purpose switching and amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maxim

 0.13. Size:113K  jmnic
 2sa1061.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1061 DESCRIPTION With TO-3PN package Complement to type 2SC2485 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum r

 0.14. Size:158K  jmnic
 2sa1062.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1062 DESCRIPTION With TO-3PN package Complement to type 2SC2486 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (T

 0.15. Size:213K  inchange semiconductor
 2sa1065.pdf

isc Silicon PNP Power Transistor 2SA1065 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC2489 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RAT

 0.16. Size:221K  inchange semiconductor
 2sa1069a.pdf

isc Silicon PNP Power Transistor 2SA1069A DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXI

 0.17. Size:208K  inchange semiconductor
 2sa1060.pdf

isc Silicon PNP Power Transistor 2SA1060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2484 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 0.18. Size:207K  inchange semiconductor
 2sa1067.pdf

isc Silicon PNP Power Transistor 2SA1067 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 0.19. Size:182K  inchange semiconductor
 2sa1069a-z.pdf

isc Silicon PNP Power Transistor 2SA1069A-Z DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators,DC/DC converters, and high frequency powe

 0.20. Size:207K  inchange semiconductor
 2sa1068.pdf

isc Silicon PNP Power Transistor 2SA1068 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 0.21. Size:213K  inchange semiconductor
 2sa1064.pdf

isc Silicon PNP Power Transistor 2SA1064 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC2488 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RAT

 0.22. Size:199K  inchange semiconductor
 2sa1063.pdf

isc Silicon PNP Power Transistor 2SA1063 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC2487 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RAT

 0.23. Size:208K  inchange semiconductor
 2sa1061.pdf

isc Silicon PNP Power Transistor 2SA1061 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2485 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 0.24. Size:93K  inchange semiconductor
 2sa1069-a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION With TO-220 package Complement to type 2SC2516/2516A Low collector saturation voltage APPLICATIONS Switching regulators DC-DC converters High-frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 sim

 0.25. Size:182K  inchange semiconductor
 2sa1069-z.pdf

isc Silicon PNP Power Transistor 2SA1069-Z DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators,DC/DC converters, and high frequency power

 0.26. Size:217K  inchange semiconductor
 2sa1069.pdf

isc Silicon PNP Power Transistor 2SA1069 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIM

 0.27. Size:208K  inchange semiconductor
 2sa1062.pdf

isc Silicon PNP Power Transistor 2SA1062 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2486 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM