To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETSILICON POWER TRANSISTORS2SA1069, 1069APNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGORDERING INFORMATIONThe 2SA1069/1069A are the mold power transistors developed forhigh-speed switching, and is ideal for use as a driver in devices suchPart No. Pac ageas switching regulators, DC/DC converters, and high-frequency power2SA1069 -220ABamplifiers.2SA10

JMnic Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION With TO-220 package Complement to type 2SC2516/2516A Low collector saturation voltage APPLICATIONS Switching regulators DC-DC converters High-frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (

JMnic Product Specification Silicon PNP Power Transistors 2SA1065 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency Complement to type 2SC2489 APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3

Product Specification www.jmnic.comSilicon PNP Power Transistors 2SA1060 DESCRIPTION With TO-3PN package Complement to type 2SC2484 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum rat

JMnic Product Specification Silicon PNP Power Transistors 2SA1067 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=)

JMnic Product Specification Silicon PNP Power Transistors 2SA1068 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio and general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=)

JMnic Product Specification Silicon PNP Power Transistors 2SA1064 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2SC2488 High transition frequency APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3

Product Specification www.jmnic.comSilicon PNP Power Transistors 2SA1063 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS Designed for general purpose switching and amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maxim

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1061 DESCRIPTION With TO-3PN package Complement to type 2SC2485 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum r

JMnic Product Specification Silicon PNP Power Transistors 2SA1062 DESCRIPTION With TO-3PN package Complement to type 2SC2486 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings (T

isc Silicon PNP Power Transistor 2SA1065DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2489Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF amplifier, high power amplifier applications.ABSOLUTE MAXIMUM RAT

isc Silicon PNP Power Transistor 2SA1069ADESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXI

isc Silicon PNP Power Transistor 2SA1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2484Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon PNP Power Transistor 2SA1067DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF amplifier, high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc Silicon PNP Power Transistor 2SA1069A-ZDESCRIPTIONLow Collector Saturation VoltageFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching regulators,DC/DCconverters, and high frequency powe

isc Silicon PNP Power Transistor 2SA1068DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF amplifier, high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc Silicon PNP Power Transistor 2SA1064DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2488Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF amplifier, high power amplifier applications.ABSOLUTE MAXIMUM RAT

isc Silicon PNP Power Transistor 2SA1063DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2487Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF amplifier, high power amplifier applications.ABSOLUTE MAXIMUM RAT

isc Silicon PNP Power Transistor 2SA1061DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2485Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION With TO-220 package Complement to type 2SC2516/2516A Low collector saturation voltage APPLICATIONS Switching regulators DC-DC converters High-frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 sim

isc Silicon PNP Power Transistor 2SA1069-ZDESCRIPTIONLow Collector Saturation VoltageFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching regulators,DC/DCconverters, and high frequency power

isc Silicon PNP Power Transistor 2SA1069DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM

isc Silicon PNP Power Transistor 2SA1062DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2486Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM