PBRN123EK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBRN123EK  📄📄 

Código: G3

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 2.2 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: SOT-346

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PBRN123EK datasheet

 ..1. Size:152K  nxp
 pbrn123es pbrn123e pbrn123ek.pdf pdf_icon

PBRN123EK

PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 2.2 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123EK SOT346 SC-59A TO-236 P

 6.1. Size:148K  nxp
 pbrn123e.pdf pdf_icon

PBRN123EK

PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 2.2 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123EK SOT346 SC-59A TO-236 P

 7.1. Size:154K  nxp
 pbrn123ys pbrn123y pbrn123yk.pdf pdf_icon

PBRN123EK

PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 10 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123YK SOT346 SC-59A TO-236 PB

 7.2. Size:150K  nxp
 pbrn123y.pdf pdf_icon

PBRN123EK

PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 10 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123YK SOT346 SC-59A TO-236 PB

MOSTRAR MÁS

Otros transistores... MUN5334DW1T1G, MUN5335DW1T1G, MUN5336DW1, MUN5336DW1T1G, PBRN113EK, PBRN113ES, PBRN113ZK, PBRN113ZS, BD140, PBRN123ES, PBRN123YK, PBRN123YS, PDTA113EK, PDTA113ES, PDTA113ZK, PDTA113ZS, PDTA114TK