PBRN123EK Datasheet. Specs and Replacement
Type Designator: PBRN123EK 📄📄
SMD Transistor Code: G3
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: SOT-346
PBRN123EK Substitution
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PBRN123EK datasheet
pbrn123es pbrn123e pbrn123ek.pdf 
PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 2.2 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123EK SOT346 SC-59A TO-236 P... See More ⇒
PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 2.2 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123EK SOT346 SC-59A TO-236 P... See More ⇒
pbrn123ys pbrn123y pbrn123yk.pdf
PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 10 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123YK SOT346 SC-59A TO-236 PB... See More ⇒
PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k , R2 = 10 k Rev. 01 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123YK SOT346 SC-59A TO-236 PB... See More ⇒
Detailed specifications: MUN5334DW1T1G, MUN5335DW1T1G, MUN5336DW1, MUN5336DW1T1G, PBRN113EK, PBRN113ES, PBRN113ZK, PBRN113ZS, BD140, PBRN123ES, PBRN123YK, PBRN123YS, PDTA113EK, PDTA113ES, PDTA113ZK, PDTA113ZS, PDTA114TK
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