PBRN123ES
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBRN123ES
Código: N123ES
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.7
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 7
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
SOT-54
Búsqueda de reemplazo de transistor bipolar PBRN123ES
PBRN123ES
Datasheet (PDF)
..1. Size:152K nxp
pbrn123es pbrn123e pbrn123ek.pdf
PBRN123E seriesNPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 2.2 kRev. 01 27 February 2007 Product data sheet1. Product profile1.1 General description800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistors (RET) family in small plastic packages.Table 1. Product overviewType number PackageNXP JEITA JEDECPBRN123EK SOT346 SC-59A TO-236P
6.1. Size:148K nxp
pbrn123e.pdf
PBRN123E seriesNPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 2.2 kRev. 01 27 February 2007 Product data sheet1. Product profile1.1 General description800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistors (RET) family in small plastic packages.Table 1. Product overviewType number PackageNXP JEITA JEDECPBRN123EK SOT346 SC-59A TO-236P
7.1. Size:154K nxp
pbrn123ys pbrn123y pbrn123yk.pdf
PBRN123Y seriesNPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 kRev. 01 27 February 2007 Product data sheet1. Product profile1.1 General description800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistors (RET) family in small plastic packages.Table 1. Product overviewType number PackageNXP JEITA JEDECPBRN123YK SOT346 SC-59A TO-236PB
7.2. Size:150K nxp
pbrn123y.pdf
PBRN123Y seriesNPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 kRev. 01 27 February 2007 Product data sheet1. Product profile1.1 General description800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistors (RET) family in small plastic packages.Table 1. Product overviewType number PackageNXP JEITA JEDECPBRN123YK SOT346 SC-59A TO-236PB
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.