PDTC115TK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTC115TK
Código: 28
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 4.5
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 2.5 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-346
Búsqueda de reemplazo de transistor bipolar PDTC115TK
PDTC115TK Datasheet (PDF)
pdtc115tk pdtc115ts.pdf
PDTC115T seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = openRev. 04 17 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN resistor-equipped transistors.Table 1: Product overviewType number Package PNP complementPhilips JEITAPDTC115TE SOT416 SC-75 PDTA115TEPDTC115TK SOT346 SC-59A PDTA115TKPDTC115TM SOT883 SC-101 PDTA115TM[1]PD
pdtc115t ser.pdf
PDTC115T seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = openRev. 04 17 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN resistor-equipped transistors.Table 1: Product overviewType number Package PNP complementPhilips JEITAPDTC115TE SOT416 SC-75 PDTA115TEPDTC115TK SOT346 SC-59A PDTA115TKPDTC115TM SOT883 SC-101 PDTA115TM[1]PD
pdtc115e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTC115E seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
pdtc115eef pdtc115ek pdtc115es.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTC115E seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .