PDTC123TS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTC123TS  📄📄 

Código: TC123T

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT-54

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PDTC123TS datasheet

 ..1. Size:78K  philips
pdtc123tk pdtc123ts pdtc123t ser.pdf pdf_icon

PDTC123TS

PDTC123T series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 01 10 March 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package PNP complement Philips JEITA JEDEC PDTC123TE SOT416 SC-75 - PDTA123TE PDTC123TK

 7.1. Size:54K  motorola
pdtc123jef 1.pdf pdf_icon

PDTC123TS

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

 7.2. Size:55K  motorola
pdtc123je 3.pdf pdf_icon

PDTC123TS

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3

 7.3. Size:56K  motorola
pdtc123jt 3.pdf pdf_icon

PDTC123TS

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design

Otros transistores... PDTC115EK, PDTC115ES, PDTC115TK, PDTC115TS, PDTC123EEF, PDTC123EK, PDTC123ES, PDTC123TK, 2SB817, PDTC123YK, PDTC123YS, PDTC124TEF, PDTC124TK, PDTC124TS, PDTC124XEF, PDTC124XK, PDTC124XS